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NZD4V3MUT5G

Onsemi

NZD4V3MUT5G by Onsemi

NZD4V3MUT5G by Onsemi is a Zener diode with 4.3V nominal reference voltage, 1.1V max forward voltage, and 5uA max reverse current. It is ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.210

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10,000 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.045

10k+ parts

$0.030

10,000

$0.210

$0.078

$0.045

$0.030

Mouser Electronics

USA . 4,167 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.045

10k+ parts

$0.030

4,167

$0.210

$0.078

$0.045

$0.030

Flip Electronics (Authorized)

USA . 240,000 parts In-Stock

1+ parts

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Verical

USA . 240,000 parts In-Stock

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$0.025

240,000

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$0.025

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 240,000 parts In-Stock

1+ parts

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240,000

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Vyrian

USA . 8,629 parts In-Stock

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8,629

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Digiode

USA . 764 parts In-Stock

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764

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Distributors (Availability)

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AZTECH Wire

Italy . 1,115 parts In-Stock

1+ parts

$12.750

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$12.750

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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TANS Electronics

Latvia . 7,817 parts In-Stock

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Kulean Microsystems

USA . 5,074 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,573 parts In-Stock

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Corphita

USA . 2,080 parts In-Stock

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UHIMA Technologies

Türkiye . 831 parts In-Stock

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Problanco Electronics

Mexico . 304 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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SupplyDigital Components

Austria . 7 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NZD4V3MUT5G Zener Diode. This single-configured diode offers a wide range of applications, from voltage regulation to surge protection. With a maximum reverse current of 5 uA and a nominal reference voltage of 4.3 V, this diode provides precise and efficient performance. Trust in the renowned manufacturer, Onsemi, to deliver cutting-edge technology and unparalleled value to meet your electronic component needs. Upgrade your designs with the NZD4V3MUT5G Zener Diode for optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan.

Working Test Current: 5 mA

Suitable for a variety of applications and can handle moderate current levels effectively.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 5 uA

Ensures minimal leakage current, which is important for accurate voltage regulation.

Maximum Voltage Tolerance: 4.99 %

Provides precise voltage regulation within a narrow tolerance range.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures without compromising performance.

Maximum Power Dissipation: 0.2 W

Can dissipate heat effectively, preventing overheating and potential damage.

Technology: ZENER

Utilizes Zener diode technology for accurate voltage regulation and stability.

Terminal Form: NO LEAD

Suitable for lead-free applications, meeting environmental regulations.

Polarity: UNIDIRECTIONAL

Ensures current flows in a single direction, preventing reverse voltage damage.

Technical Specifications

Zener Diodes NZD4V3MUT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Nominal Reference Voltage:

4.3 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

4.99 %

Working Test Current:

5 mA

Trade Compliance

NZD4V3MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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