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NZD4V7MUT5G

Onsemi

NZD4V7MUT5G by Onsemi

NZD4V7MUT5G by Onsemi is a Zener diode with 4.7V nominal reference voltage and 1.1V max forward voltage, suitable for unidirectional polarity applications. It has a working test current of 5mA, max reverse current of 2uA, and operates b/w -55 to 150 °C temperature range. Ideal for circuit protection in various electronic devices due to its low dynamic impedance and high voltage tolerance of up to 4.99%.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,702 parts In-Stock

1+ parts

$0.220

100+ parts

$0.084

1k+ parts

$0.054

10k+ parts

$0.037

7,702

$0.220

$0.084

$0.054

$0.037

Flip Electronics (Authorized)

USA . 240,000 parts In-Stock

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Digiode

USA . 56 parts In-Stock

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$0.247

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56

$0.247

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Vyrian

USA . 234 parts In-Stock

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$0.260

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234

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Flip Electronics

USA . 260,000 parts In-Stock

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Corphita

USA . 2,170 parts In-Stock

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$0.234

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2,170

$0.234

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Corohmni

South Africa . 85 parts In-Stock

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$0.260

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85

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Component Stockers USA

USA . 190,409 parts In-Stock

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$0.430

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190,409

$0.430

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,731 parts In-Stock

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SupplyDigital Components

Austria . 6,096 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,098 parts In-Stock

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TANS Electronics

Latvia . 2,481 parts In-Stock

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Kulean Microsystems

USA . 2,261 parts In-Stock

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UHIMA Technologies

Türkiye . 158 parts In-Stock

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Overview

Unlock a world of possibilities with the NZD4V7MUT5G Zener Diode by Onsemi. This high-quality product offers unparalleled value and benefits for your electronic projects. Manufactured by industry leader Onsemi, this Zener diode is perfect for applications requiring precision voltage regulation. With a nominal reference voltage of 4.7V and maximum reverse current of 2uA, you can trust the NZD4V7MUT5G to deliver reliable performance every time. Upgrade your circuits with this top-of-the-line Zener diode from Onsemi and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and ensures reliable performance of the Zener diode.

Working Test Current: 5 mA

The 5 mA working test current ensures that the Zener diode operates efficiently under specified conditions.

Maximum Reverse Current: 2 uA

Low maximum reverse current of 2 uA indicates good reverse leakage protection, making it suitable for sensitive electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows the Zener diode to function reliably in various environments.

Nominal Reference Voltage: 4.7 V

Stable nominal reference voltage of 4.7 V ensures accuracy and consistency in voltage regulation applications.

Technical Specifications

Zener Diodes NZD4V7MUT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

800 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Nominal Reference Voltage:

4.7 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

4.99 %

Working Test Current:

5 mA

Trade Compliance

NZD4V7MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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