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NYC008-6JG

Onsemi

NYC008-6JG by Onsemi

The Onsemi NYC008-6JG is a single SCR with max DC gate trigger current of 0.2mA and repetitive peak reverse voltage of 600V. Its package style is cylindrical, suitable for applications requiring up to 0.8A RMS on-state current, such as power control systems in industrial settings.

Median Price

$0.189

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 28 parts In-Stock

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$0.189

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$0.170

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28

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Digiode

USA . 2,118 parts In-Stock

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$0.180

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J2 Sourcing AB

Sweden . 22,457 parts In-Stock

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Vyrian

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Corphita

USA . 1,233 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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$0.189

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AZTECH Wire

Italy . 980 parts In-Stock

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$18.220

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980

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 6,926 parts In-Stock

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TANS Electronics

Latvia . 4,062 parts In-Stock

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Kulean Microsystems

USA . 2,720 parts In-Stock

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SupplyDigital Components

Austria . 2,214 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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Overview

Discover the NYC008-6JG by Onsemi, a high-quality Silicon Controlled Rectifier (SCR) designed to provide reliable performance in a wide range of applications. With a durable plastic/epoxy package and a maximum DC gate trigger current of 0.2 mA, this SCR offers exceptional value and benefits to customers seeking a dependable solution for their electronic needs. Whether you're looking to control power in industrial equipment or regulate voltage in consumer electronics, the NYC008-6JG is the perfect choice. Trust Onsemi's reputation for excellence and innovation, and experience the advantages of using this top-of-the-line product today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the product lightweight and durable, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient operation and control of the silicon controlled rectifier.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly.

Repetitive Peak Reverse Voltage: 600 V

High peak reverse voltage ensures the SCR can handle high voltage applications with ease.

Maximum RMS On-state Current: 0.8 A

The high maximum RMS on-state current allows the SCR to handle higher current loads efficiently.

Technical Specifications

Silicon Controlled Rectifiers (SCR) NYC008-6JG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

JEDEC-95 Code:

TO-266AA

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

NYC008-6JG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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