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NVDSH20120C

Onsemi

NVDSH20120C by Onsemi

The Onsemi NVDSH20120C is a single Schottky rectifier diode with a max reverse voltage of 1200V and forward current of 26A. It has a package style of flange mount and is ideal for high-efficiency applications, operating b/w -55 °C to 175°C. With a power dissipation of 214W, it is designed for use in automotive electronics meeting AEC-Q101 standards.

Median Price

$11.710

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 330 parts In-Stock

1+ parts

$11.710

100+ parts

-

1k+ parts

$6.560

10k+ parts

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330

$11.710

-

$6.560

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DigiKey

USA . 285 parts In-Stock

1+ parts

$11.830

100+ parts

$7.101

1k+ parts

$5.735

10k+ parts

-

285

$11.830

$7.101

$5.735

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Verical

USA . 22,500 parts In-Stock

1+ parts

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100+ parts

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$5.771

10k+ parts

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22,500

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$5.771

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Distributors (In-Stock)

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Digiode

USA . 1,482 parts In-Stock

1+ parts

$9.785

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1,482

$9.785

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Flip Electronics

USA . 249,300 parts In-Stock

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249,300

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Vyrian

USA . 2,079 parts In-Stock

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2,079

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Distributors (Availability)

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Corphita

USA . 1,497 parts In-Stock

1+ parts

$9.270

100+ parts

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1,497

$9.270

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Corohmni

South Africa . 166 parts In-Stock

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$10.300

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166

$10.300

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Microchip USA

USA . 7,381 parts In-Stock

1+ parts

$25.822

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7,381

$25.822

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SupplyDigital Components

Austria . 6,433 parts In-Stock

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6,433

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Kulean Microsystems

USA . 5,424 parts In-Stock

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5,424

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TANS Electronics

Latvia . 3,087 parts In-Stock

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3,087

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Problanco Electronics

Mexico . 833 parts In-Stock

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833

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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Overview

Experience unmatched efficiency and performance with the NVDSH20120C by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are built to last. The NVDSH20120C is designed for applications where reliability and precision are key, offering a maximum reverse test voltage of 1200V and a maximum output current of 26A. With its superior technology and high power dissipation capability, this product ensures optimal functionality even in the most demanding environments. Upgrade your efficiency and enhance your operations with the NVDSH20120C from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Maximum Reverse Current: 200 uA

Low reverse current helps in reducing power losses and improving the efficiency of the circuit.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures the diode can handle large voltage spikes without breakdown, making it suitable for high voltage applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the diode to be used in extreme temperature environments.

Maximum Power Dissipation: 214 W

High power dissipation capability enables the diode to handle heavy loads without overheating, ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making this diode suitable for power supply and rectification applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, making them ideal for high-frequency applications where efficiency is important.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes have high thermal conductivity and can operate at higher temperatures, making them suitable for high-power and high-temperature applications.

Technical Specifications

Diodes & Rectifiers NVDSH20120C attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

119 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

26 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

214 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

NVDSH20120C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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