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NVDSH50120C

Onsemi

NVDSH50120C by Onsemi

NVDSH50120C by Onsemi is a single Schottky rectifier diode with 1200V reverse test voltage and 53A output current. It has a max power dissipation of 375W, making it suitable for high-efficiency applications. With an operating temperature range from -55 °C to 175°C, it is ideal for various industrial uses.

Median Price

$23.280

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 31 parts In-Stock

1+ parts

$23.280

100+ parts

$14.826

1k+ parts

$13.712

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31

$23.280

$14.826

$13.712

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Chip1Stop

Japan . 795 parts In-Stock

1+ parts

$69.500

100+ parts

$32.500

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$23.500

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795

$69.500

$32.500

$23.500

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Verical

USA . 1,350 parts In-Stock

1+ parts

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$15.671

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1,350

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$15.671

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EBV Elektronik

Germany . 330 parts In-Stock

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330

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Distributors (In-Stock)

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Digiode

USA . 1,108 parts In-Stock

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$20.311

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1,108

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Vyrian

USA . 5,842 parts In-Stock

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5,842

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Flip Electronics

USA . 900 parts In-Stock

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900

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NAC Semi

USA . 270 parts In-Stock

1+ parts

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100+ parts

$38.520

1k+ parts

$35.020

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270

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$38.520

$35.020

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Distributors (Availability)

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Corphita

USA . 440 parts In-Stock

1+ parts

$19.242

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440

$19.242

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Corohmni

South Africa . 426 parts In-Stock

1+ parts

$21.380

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426

$21.380

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Microchip USA

USA . 190 parts In-Stock

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$46.329

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190

$46.329

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QUARKTWIN TECHNOLOGY LTD

USA . 20,527 parts In-Stock

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SupplyDigital Components

Austria . 6,412 parts In-Stock

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Kulean Microsystems

USA . 6,035 parts In-Stock

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6,035

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Problanco Electronics

Mexico . 5,423 parts In-Stock

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5,423

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UHIMA Technologies

Türkiye . 874 parts In-Stock

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874

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TANS Electronics

Latvia . 560 parts In-Stock

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560

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Overview

Enhance the efficiency of your electronic devices with the NVDSH50120C by Onsemi. Manufactured with top-quality materials, this Schottky rectifier diode offers a maximum reverse voltage of 1200V and a maximum forward voltage of 1.75V, making it ideal for high-power applications. With a maximum output current of 53A and a maximum power dissipation of 375W, this diode ensures reliable performance even in extreme temperatures ranging from -55 °C to 175°C. Trust Onsemi's reputation for excellence and choose the NVDSH50120C for seamless integration and superior functionality in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a long lifespan.

Maximum Reverse Current: 200 uA

Low reverse current helps in minimizing power loss and improving overall efficiency of the circuit.

Reverse Test Voltage: 1200 V

High reverse voltage rating makes this diode suitable for applications requiring high voltage protection.

Maximum Power Dissipation: 375 W

High power dissipation capability allows this diode to handle heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making them ideal for power supply applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speeds, making them suitable for high-frequency applications with low power loss.

Maximum Output Current: 53 A

High output current rating allows this diode to handle large currents without failure, making it suitable for power electronics applications.

Technical Specifications

Diodes & Rectifiers NVDSH50120C attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

231 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

53 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

375 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

NVDSH50120C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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