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NVC6S5A354PLZT1G

Onsemi

NVC6S5A354PLZT1G by Onsemi

NVC6S5A354PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 3A and 0.1 ohm RDS(on), suitable for small outline packages at -55 to 175 °C.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 42,834 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.183

10k+ parts

$0.179

42,834

-

$0.187

$0.183

$0.179

Verical

USA . 32,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.227

32,950

-

-

-

$0.227

Rochester

USA . 30,854 parts In-Stock

1+ parts

-

100+ parts

$0.261

1k+ parts

$0.216

10k+ parts

$0.193

30,854

-

$0.261

$0.216

$0.193

DigiKey

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.880

10k+ parts

$0.880

30,000

-

-

$0.880

$0.880

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

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15,000

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Distributors (In-Stock)

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Vyrian

USA . 1,690 parts In-Stock

1+ parts

$0.187

100+ parts

-

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-

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1,690

$0.187

-

-

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Digiode

USA . 88 parts In-Stock

1+ parts

$0.203

100+ parts

-

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88

$0.203

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Flip Electronics

USA . 210,000 parts In-Stock

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210,000

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Martec Srl

Italy . 21,361 parts In-Stock

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21,361

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Distributors (Availability)

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Corohmni

South Africa . 483 parts In-Stock

1+ parts

$0.187

100+ parts

-

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483

$0.187

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Corphita

USA . 2,250 parts In-Stock

1+ parts

$0.193

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-

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2,250

$0.193

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Component Stockers USA

USA . 26,309 parts In-Stock

1+ parts

$0.220

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

$0.190

26,309

$0.220

$0.210

$0.190

$0.190

Authorized Procurement Solutions

USA . 120,000 parts In-Stock

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Component Connect

USA . 104,900 parts In-Stock

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Perfect Parts

USA . 27,138 parts In-Stock

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27,138

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Continental Prestige Electronics

USA . 14,291 parts In-Stock

1+ parts

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100+ parts

$0.187

1k+ parts

$0.179

10k+ parts

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14,291

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$0.187

$0.179

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Infinite Electronics LLP (Excess)

. 10,006 parts In-Stock

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10,006

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Formix International (Excess)

India . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,466 parts In-Stock

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7,466

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Problanco Electronics

Mexico . 7,141 parts In-Stock

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7,141

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SupplyDigital Components

Austria . 4,128 parts In-Stock

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4,128

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 155 parts In-Stock

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155

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TANS Electronics

Latvia . 25 parts In-Stock

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25

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Overview

Enhance your electronic devices with the NVC6S5A354PLZT1G by Onsemi, a top-tier manufacturer known for delivering high-quality Small Signal Field Effect Transistors. This P-CHANNEL transistor, featuring a built-in diode, is perfect for switching applications. Its durable plastic/epoxy body and GULL WING terminals ensure reliable performance in a compact design. With a maximum power dissipation of 1.9W and a minimum DS breakdown voltage of 60V, this transistor offers exceptional value and efficiency. Upgrade your projects with the NVC6S5A354PLZT1G and experience unparalleled benefits and advantages.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components, ensuring durability and long-term reliability.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are preferred, offering flexibility for circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuitry design and saves space by including a built-in diode for certain applications.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast switching speeds and efficiency.

Surface Mount: YES

Easily mountable on PCBs, making it suitable for compact designs and mass production.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failure.

Maximum Power Dissipation (Abs): 1.9 W

Can dissipate heat effectively, preventing overheating and ensuring stable performance.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without performance degradation, increasing reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOS technology for efficient performance and low power consumption.

Maximum Drain Current (ID): 3 A

Capable of handling high current loads, suitable for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVC6S5A354PLZT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVC6S5A354PLZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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