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NV34C02WF

Onsemi

NV34C02WF by Onsemi

NV34C02WF by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 2000000 write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,356 parts In-Stock

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Vyrian

USA . 1,019 parts In-Stock

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SupplyDigital Components

Austria . 7,953 parts In-Stock

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TANS Electronics

Latvia . 5,932 parts In-Stock

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Problanco Electronics

Mexico . 4,906 parts In-Stock

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Kulean Microsystems

USA . 2,883 parts In-Stock

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Corphita

USA . 1,663 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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Overview

Unlock the power of reliable data storage with the NV34C02WF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance with their EEPROM technology. Ideal for automotive applications, this compact and versatile device offers customers a seamless experience with its synchronous operating mode and minimum supply voltage of 1.7V. Say goodbye to data loss worries with the NV34C02WF, providing up to 2 million write/erase cycles and a memory density of 2048 bits. Trust Onsemi for superior technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for the package body ensures long-term performance of the EEPROM.

Nominal Supply Voltage (Vsup): 3.3

Suitable voltage for various applications and compatibility with common power sources.

Operating Mode: SYNCHRONOUS

Efficient synchronous operation ensures synchronized data transfers and reliable performance.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for operation in harsh environmental conditions.

Endurance: 2000000 Write/Erase Cycles

High endurance rating means the EEPROM can handle frequent read/write cycles without degradation.

Serial Bus Type: I2C

I2C serial interface enables easy integration with other devices and efficient data communication.

Technical Specifications

EEPROM NV34C02WF attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Access Time:

900 ns

Maximum Clock Frequency (fCLK):

400 MHz

Minimum Data Retention Time:

100

Endurance:

2000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV34C02WF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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