Loading...

NTP90N02

Onsemi

NTP90N02 by Onsemi

NTP90N02 by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS(on). Ideal for SWITCHING applications due to its 85W Pdiss and ENHANCEMENT MODE operation. Package style: FLANGE MOUNT, Terminal finish: TIN LEAD, Case connection: DRAIN.

Median Price

$0.293

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,880 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

2,880

-

$0.317

$0.263

$0.235

DigiKey

USA . 2,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.270

2,880

-

-

-

$0.270

Verical

USA . 2,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.293

2,880

-

-

-

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,667 parts In-Stock

1+ parts

$0.247

100+ parts

-

1k+ parts

-

10k+ parts

-

1,667

$0.247

-

-

-

Vyrian

USA . 997 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

-

997

$0.260

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,379 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

-

2,379

$0.234

-

-

-

Corohmni

South Africa . 367 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

-

367

$0.260

-

-

-

Component Stockers USA

USA . 3,480 parts In-Stock

1+ parts

$0.270

100+ parts

$0.250

1k+ parts

$0.230

10k+ parts

-

3,480

$0.270

$0.250

$0.230

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Problanco Electronics

Mexico . 7,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,861

-

-

-

-

TANS Electronics

Latvia . 5,418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,418

-

-

-

-

Continental Prestige Electronics

USA . 2,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.238

10k+ parts

-

2,880

-

-

$0.238

-

Kulean Microsystems

USA . 2,633 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,633

-

-

-

-

A-Z Elektronik GmbH

Germany . 1,503 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,503

-

-

-

-

SupplyDigital Components

Austria . 925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

925

-

-

-

-

UHIMA Technologies

Türkiye . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Overview

Unlock the power of efficient switching with the Onsemi NTP90N02 Power Field Effect Transistor. Manufactured by a trusted name in semiconductor technology, this N-CHANNEL transistor offers reliable performance and durability. Ideal for various applications, this single configuration transistor features a built-in diode for added convenience. With a high breakdown voltage and low on-resistance, the NTP90N02 delivers exceptional value and benefits to customers seeking high-quality components for their projects. Experience superior performance and reliability with this advanced transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have superior conductivity and switching characteristics compared to P-channel transistors, making this product a good choice for efficient performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse voltage protection and helps prevent damage to the transistor, enhancing its reliability and longevity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control and regulation.

Minimum DS Breakdown Voltage: 24 V

With a minimum breakdown voltage of 24V, this transistor can safely handle high voltage loads, ensuring reliable operation in diverse circuits.

Maximum Drain-Source On Resistance: 0.0058 ohm

This low on-resistance value results in minimal power loss and efficient current flow, making the transistor highly effective for power management and switching applications.

Maximum Power Dissipation (Abs): 85 W

The high power dissipation rating allows the transistor to handle substantial power levels without overheating, ensuring stable performance under demanding conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) NTP90N02 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

733 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

24 V

Maximum Drain Current (Abs) (ID):

90 A

Maximum Drain Current (ID):

90 A

Maximum Drain-Source On Resistance:

.0058 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTP90N02 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1