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NSVMMBD717LT1G

Onsemi

NSVMMBD717LT1G by Onsemi

NSVMMBD717LT1G by Onsemi is a Schottky rectifier diode with common anode configuration, featuring a max reverse current of 1uA and min breakdown voltage of 20V. It operates b/w -55 to 150 °C, suitable for fast recovery applications in electronics due to its small outline package style and dual terminal position.

Median Price

$0.093

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.025

100+ parts

$0.023

1k+ parts

$0.021

10k+ parts

-

350

$0.025

$0.023

$0.021

-

Mouser Electronics

USA . 2,841 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

2,841

$0.490

-

-

$0.086

DigiKey

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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60,000

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-

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Flip Electronics (Authorized)

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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51,000

-

-

-

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Rochester

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.080

10k+ parts

$0.072

48,000

-

$0.097

$0.080

$0.072

Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.089

48,000

-

-

-

$0.089

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,912 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,912

$0.024

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-

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Vyrian

USA . 949 parts In-Stock

1+ parts

$0.025

100+ parts

-

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-

10k+ parts

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949

$0.025

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Flip Electronics

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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60,000

-

-

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DigiKey Marketplace

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

51,000

-

-

-

$0.069

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,146 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

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2,146

$0.022

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-

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.025

100+ parts

$0.023

1k+ parts

$0.020

10k+ parts

-

350

$0.025

$0.023

$0.020

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Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.025

100+ parts

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76

$0.025

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SupplyDigital Components

Austria . 6,983 parts In-Stock

1+ parts

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6,983

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Kulean Microsystems

USA . 6,965 parts In-Stock

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6,965

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TANS Electronics

Latvia . 6,856 parts In-Stock

1+ parts

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6,856

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Problanco Electronics

Mexico . 6,066 parts In-Stock

1+ parts

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6,066

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UHIMA Technologies

Türkiye . 901 parts In-Stock

1+ parts

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100+ parts

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901

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Overview

Discover the NSVMMBD717LT1G by Onsemi, a top-quality Schottky rectifier diode that offers fast recovery and high performance. With a common anode configuration and dual terminals, this diode is perfect for applications where efficiency and reliability are key. Onsemi's reputation for excellence in manufacturing ensures that you are getting a product that meets the highest standards. Whether you're working on power supplies, voltage converters, or other electronic devices, this diode will provide the value, benefits, and advantages you need to take your project to the next level. Trust Onsemi for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON ANODE, 2 ELEMENTS

Allows for easy integration into circuits and applications that require common anode configuration.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Current: 1 uA

Ensures minimal leakage current, improving overall efficiency and performance.

Package Shape: RECTANGULAR

Facilitates compact and space-saving designs, ideal for applications with limited space.

Reverse Test Voltage: 10 V

Provides a high reverse voltage rating, enhancing the reliability and robustness of the diodes.

No. of Terminals: 3

Offers flexibility in circuit connections and configurations, enhancing versatility in applications.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for high component density, ideal for compact electronic devices.

Application: FAST RECOVERY

Suitable for applications requiring fast switching speeds and low recovery times, improving overall efficiency.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, ensuring reliability under various conditions.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature conditions, making it suitable for a wide range of operating environments.

Terminal Finish: MATTE TIN

Provides corrosion resistance and enhances solderability, ensuring reliable and durable connections.

Terminal Position: DUAL

Allows for easy and flexible PCB mounting options, improving overall design flexibility.

Maximum Power Dissipation: 0.2 W

Handles moderate power levels efficiently, suitable for various low to medium power applications.

Minimum Breakdown Voltage: 20 V

Provides a high breakdown voltage, ensuring protection against reverse voltage spikes and overloads.

Maximum Time At Peak Reflow Temperature (s): 30

Supports efficient and reliable soldering processes during manufacturing, ensuring proper assembly.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during soldering, meeting industry-standard assembly requirements.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.37 V

Low forward voltage drop minimizes power losses and improves efficiency in rectification circuits.

Technology: SCHOTTKY

Utilizes Schottky technology for fast switching speeds, low forward voltage drop, and high efficiency in rectification.

Terminal Form: GULL WING

Facilitates easy and reliable soldering during assembly, ensuring secure connections on the PCB.

No. of Elements: 2

Dual elements provide redundancy and improved performance in rectification circuits.

Maximum Repetitive Peak Reverse Voltage: 20 V

Safely withstands reverse voltage peaks and transients, ensuring protection for the circuit.

Diode Element Material: SILICON

Utilizes silicon material for the diode elements, providing stability and reliability in rectification applications.

Technical Specifications

Diodes & Rectifiers NSVMMBD717LT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

20 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVMMBD717LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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