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NSVMBD54DWT1G

Onsemi

NSVMBD54DWT1G by Onsemi

NSVMBD54DWT1G by Onsemi is a fast recovery Schottky rectifier diode with 2 elements. It has a max reverse recovery time of 0.005 us and a max reverse current of 2 uA. This diode is ideal for applications requiring high-speed switching and operates at a max temperature of 125 °C.

Median Price

$0.208

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,000 parts In-Stock

1+ parts

$0.380

100+ parts

$0.166

1k+ parts

$0.091

10k+ parts

$0.080

6,000

$0.380

$0.166

$0.091

$0.080

Verical

USA . 69,000 parts In-Stock

1+ parts

-

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$0.036

69,000

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$0.036

DigiKey

USA . 59,750 parts In-Stock

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59,750

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Flip Electronics (Authorized)

USA . 59,750 parts In-Stock

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59,750

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Vyrian

USA . 1,321 parts In-Stock

1+ parts

$0.160

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1,321

$0.160

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Nova Conductors

Japan . 50 parts In-Stock

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$0.219

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50

$0.219

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Flip Electronics

USA . 128,750 parts In-Stock

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128,750

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DigiKey Marketplace

USA . 59,750 parts In-Stock

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59,750

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Digiode

USA . 694 parts In-Stock

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694

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 364 parts In-Stock

1+ parts

$0.160

100+ parts

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364

$0.160

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Microchip USA

USA . 4,674 parts In-Stock

1+ parts

$4.810

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4,674

$4.810

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Problanco Electronics

Mexico . 5,895 parts In-Stock

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Kulean Microsystems

USA . 5,649 parts In-Stock

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SupplyDigital Components

Austria . 2,905 parts In-Stock

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TANS Electronics

Latvia . 1,300 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Corphita

USA . 885 parts In-Stock

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Overview

Unlock the power of fast recovery with the NSVMBD54DWT1G by Onsemi. This high-quality diode offers customers a reliable solution for various applications, thanks to its cutting-edge technology and exceptional performance. With a maximum reverse recovery time of just 0.005 us and a maximum operating temperature of 125 °C, this diode ensures efficient operation and long-term durability. Experience the benefits of seamless integration, superior power dissipation, and precise voltage regulation with the NSVMBD54DWT1G – the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.005 us

The ultra-fast reverse recovery time ensures efficient operation and minimizes power loss in fast recovery applications.

Maximum Reverse Current: 2 uA

The low reverse current ensures minimal leakage and improved performance in reverse bias conditions.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand elevated temperatures during operation.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting AC to DC efficiently, making it ideal for rectification applications.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching capabilities, making this diode suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NSVMBD54DWT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

30 V

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

25 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVMBD54DWT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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