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NSVMBD770DW1T1G

Onsemi

NSVMBD770DW1T1G by Onsemi

NSVMBD770DW1T1G by Onsemi is a Schottky rectifier diode with 70V breakdown voltage and 0.2uA reverse current. It operates b/w -55 to 150 °C, suitable for fast recovery applications. With a max power dissipation of 0.38W, it features a small outline package style for surface mount assembly.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,852 parts In-Stock

1+ parts

$0.180

100+ parts

$0.089

1k+ parts

$0.074

10k+ parts

$0.066

4,852

$0.180

$0.089

$0.074

$0.066

Avnet

USA . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

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81,000

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-

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Distributors (In-Stock)

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Digiode

USA . 2,415 parts In-Stock

1+ parts

$0.437

100+ parts

-

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2,415

$0.437

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Vyrian

USA . 2,413 parts In-Stock

1+ parts

$0.460

100+ parts

-

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2,413

$0.460

-

-

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NAC Semi

USA . 150,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.086

150,000

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-

-

$0.086

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.101

100+ parts

$0.092

1k+ parts

$0.083

10k+ parts

-

150

$0.101

$0.092

$0.083

-

Corphita

USA . 2,489 parts In-Stock

1+ parts

$0.414

100+ parts

-

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2,489

$0.414

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Corohmni

South Africa . 301 parts In-Stock

1+ parts

$0.460

100+ parts

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301

$0.460

-

-

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Component Stockers USA

USA . 3,605 parts In-Stock

1+ parts

$0.520

100+ parts

$0.330

1k+ parts

$0.200

10k+ parts

-

3,605

$0.520

$0.330

$0.200

-

Perfect Parts

USA . 131,040 parts In-Stock

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131,040

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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Eastek

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.230

10k+ parts

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9,000

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-

$0.230

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TANS Electronics

Latvia . 7,702 parts In-Stock

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7,702

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Kulean Microsystems

USA . 1,896 parts In-Stock

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1,896

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Problanco Electronics

Mexico . 1,539 parts In-Stock

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1,539

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SupplyDigital Components

Austria . 1,015 parts In-Stock

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1,015

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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913

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Overview

Unlock the power of reliable and efficient electronics with the NSVMBD770DW1T1G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality diodes & rectifiers for a wide range of applications. With its fast recovery technology and maximum power dissipation of 0.38W, this product offers customers superior performance and durability. From automotive to industrial settings, this Schottky rectifier diode is designed to meet your needs with a reverse test voltage of 35V and a minimum breakdown voltage of 70V. Upgrade your systems with the NSVMBD770DW1T1G and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan.

Config: SEPARATE, 2 ELEMENTS

Allows for separate current flows, increasing efficiency and reducing heat dissipation.

Surface Mount: YES

Enables easy and secure installation on circuit boards.

Maximum Reverse Current: 0.2 uA

Ensures minimal power loss in the reverse direction, enhancing overall efficiency.

Package Shape: RECTANGULAR

Facilitates easy placement and integration into electronic devices.

Reverse Test Voltage: 35 V

Provides a high reverse voltage rating for reliable performance in various applications.

No. of Terminals: 6

Offers multiple connection points for versatile connectivity options.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the circuit board, ideal for compact electronic devices.

Application: FAST RECOVERY

Suitable for applications requiring rapid switching and minimal recovery time.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising functionality.

Minimum Operating Temperature: -55 °C

Operates effectively even in low-temperature environments.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant connection interface.

Terminal Position: DUAL

Allows for easy and secure connection in various orientations.

Maximum Power Dissipation: 0.38 W

Efficiently dissipates heat to prevent overheating during operation.

Minimum Breakdown Voltage: 70 V

High breakdown voltage prevents voltage spikes from damaging the diode.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliability during the reflow soldering process.

Peak Reflow Temperature °C: 260

Suitable for high-temperature reflow soldering processes for secure connections.

Reference Standard: AEC-Q101

Meets automotive quality standards for reliable performance in automotive applications.

Diode Type: RECTIFIER DIODE

Designed for rectification of alternating current signals, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures minimal power loss during forward conduction.

Maximum Output Current: 0.1 A

Capable of handling moderate current loads in various electronic circuits.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and easy soldering on the PCB.

No. of Elements: 2

Multiple elements allow for improved performance and reliability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 70 V

High reverse voltage rating for reliable operation in various voltage conditions.

Maximum Non Repetitive Peak Forward Current: 1 A

Capable of handling short-term high current surges without damage.

Diode Element Material: SILICON

Silicon material provides high conductivity and reliability for the diode elements.

Technical Specifications

Diodes & Rectifiers NSVMBD770DW1T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

70 V

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.38 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

35 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVMBD770DW1T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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