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NSD914XV2T5G

Onsemi

NSD914XV2T5G by Onsemi

NSD914XV2T5G by Onsemi is a single diode with a reverse test voltage of 75V and max forward voltage of 1V. It is a small outline rectifier diode with a max output current of 0.2A, ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 4,615 parts In-Stock

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Digiode

USA . 1,631 parts In-Stock

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AZTECH Wire

Italy . 512 parts In-Stock

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$14.050

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Kepictronics

USA . 14,000 parts In-Stock

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SupplyDigital Components

Austria . 7,848 parts In-Stock

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Kulean Microsystems

USA . 3,485 parts In-Stock

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Problanco Electronics

Mexico . 3,339 parts In-Stock

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TANS Electronics

Latvia . 3,319 parts In-Stock

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Corphita

USA . 2,118 parts In-Stock

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UHIMA Technologies

Türkiye . 608 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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Overview

Discover the NSD914XV2T5G by Onsemi, a high-quality rectifier diode that promises unmatched reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. From power supplies to battery chargers, this diode ensures optimal efficiency and precision. With a fast reverse recovery time and low reverse current, you can trust this diode to deliver consistent results every time. Upgrade your projects with the NSD914XV2T5G and experience the benefits of superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching performance, making it efficient for use in high-speed circuits.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and improved efficiency.

Maximum Breakdown Voltage: 100 V

Withstands high voltage levels, making it reliable in challenging environments.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature conditions, expanding its usability in various applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring efficient conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers NSD914XV2T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

75 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSD914XV2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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