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NSB13ANT3G

Onsemi

NSB13ANT3G by Onsemi

NSB13ANT3G by Onsemi is a Zener diode with 600W peak power dissipation, 15.9V max breakdown voltage, and 21.5V clamping voltage. Ideal for transient suppression in electronics, it comes in a small outline package with tin finish for surface mount applications.

Median Price

$0.291

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

5,000

-

$0.291

$0.241

$0.215

DigiKey

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.360

10k+ parts

-

5,000

-

-

$0.360

-

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.269

5,000

-

-

-

$0.269

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,190 parts In-Stock

1+ parts

$0.238

100+ parts

-

1k+ parts

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1,190

$0.238

-

-

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Chip Stock

USA . 38,000 parts In-Stock

1+ parts

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38,000

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Vyrian

USA . 10,764 parts In-Stock

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10,764

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,427 parts In-Stock

1+ parts

$0.225

100+ parts

-

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1,427

$0.225

-

-

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Corohmni

South Africa . 471 parts In-Stock

1+ parts

$0.250

100+ parts

-

1k+ parts

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471

$0.250

-

-

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AZTECH Wire

Italy . 172 parts In-Stock

1+ parts

$14.110

100+ parts

-

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172

$14.110

-

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Kepictronics

USA . 120,000 parts In-Stock

1+ parts

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120,000

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SupplyDigital Components

Austria . 7,160 parts In-Stock

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7,160

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TANS Electronics

Latvia . 6,728 parts In-Stock

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6,728

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.204

10k+ parts

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5,000

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-

$0.204

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Kulean Microsystems

USA . 786 parts In-Stock

1+ parts

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786

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UHIMA Technologies

Türkiye . 379 parts In-Stock

1+ parts

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379

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Problanco Electronics

Mexico . 155 parts In-Stock

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155

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Overview

Enhance your electronic devices with the NSB13ANT3G by Onsemi, a cutting-edge Transient Suppression Device that guarantees top-notch quality and superior performance. Manufactured by industry leader Onsemi, this product offers unparalleled reliability and protection against voltage transients, ensuring the longevity of your equipment. Ideal for a wide range of applications, this device provides peace of mind and security for your valuable electronics. Upgrade to the NSB13ANT3G today and experience the unmatched value and benefits it brings to your technological setup.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability, making the product suitable for various environments and applications.

Config: SINGLE

Single configuration simplifies installation and maintenance, making it user-friendly.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and facilitating assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capacity ensures reliable protection against voltage spikes and transients.

Nominal Breakdown Voltage: 15.15 V

Precise breakdown voltage helps in accurately suppressing transient voltages and protecting sensitive components.

Package Shape: RECTANGULAR

Rectangular shape offers efficient use of space and allows for easy mounting in various orientations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diodes ensures effective suppression of voltage spikes and surges, enhancing system reliability.

Technology: ZENER

Zener technology provides stable and reliable voltage regulation, ensuring consistent performance and protection.

Maximum Clamping Voltage: 21.5 V

High clamping voltage capability ensures effective suppression of transient voltages and protects connected devices.

Technical Specifications

Transient Suppression Devices NSB13ANT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.9 V

Minimum Breakdown Voltage:

14.4 V

Nominal Breakdown Voltage:

15.15 V

Maximum Clamping Voltage:

21.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

13 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NSB13ANT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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