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NSB12ANT3G

Onsemi

NSB12ANT3G by Onsemi

NSB12ANT3G by Onsemi is a Zener diode with 600W peak power dissipation, 13.75V breakdown voltage, and 19.9V clamping voltage. Ideal for transient suppression in electronics, it operates b/w -65 °C to 150°C and has a unidirectional polarity for protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 31,000 parts In-Stock

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Bristol Electronics

USA . 6,108 parts In-Stock

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Dan-Mar Components

USA . 6,108 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,440 parts In-Stock

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Digiode

USA . 2,241 parts In-Stock

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Vyrian

USA . 1,029 parts In-Stock

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Semicontronic

India . 875 parts In-Stock

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$0.010

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875

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Ampacity Inc.

Singapore . 1,634 parts In-Stock

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$1.010

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Kepictronics

USA . 89,000 parts In-Stock

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SupplyDigital Components

Austria . 4,728 parts In-Stock

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Kulean Microsystems

USA . 3,995 parts In-Stock

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TANS Electronics

Latvia . 3,506 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,031 parts In-Stock

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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Corphita

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Corohmni

South Africa . 264 parts In-Stock

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Overview

Enhance your electronic devices with the NSB12ANT3G by Onsemi, a top-of-the-line Transient Suppression Device that guarantees superior quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers unparalleled protection against voltage spikes and surges, ensuring the longevity and efficiency of your electronics. With its advanced Zener technology and high-performance capabilities, the NSB12ANT3G is ideal for a wide range of applications. Invest in peace of mind and safeguard your equipment with this innovative solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to harsh environmental conditions, making the product long-lasting and reliable.

Config: SINGLE

SINGLE configuration simplifies installation and reduces the overall complexity of the setup.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability ensures protection against sudden spikes in voltage, making it suitable for high-performance applications.

Nominal Breakdown Voltage: 13.75 V

The precise breakdown voltage ensures effective suppression of excess voltage, safeguarding sensitive components in the circuit.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic designs, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function properly in various environments without the risk of overheating.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the device can withstand extremely cold conditions, making it suitable for a wide range of applications.

Terminal Finish: TIN

TIN terminal finish offers good conductivity and corrosion resistance, ensuring reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures efficient soldering processes and reduces the risk of heat damage to the device during assembly.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The TRANS VOLTAGE SUPPRESSOR DIODE configuration provides precise voltage clamping and protection for sensitive components in the circuit.

Technical Specifications

Transient Suppression Devices NSB12ANT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

14.3 V

Minimum Breakdown Voltage:

13.2 V

Nominal Breakdown Voltage:

13.75 V

Maximum Clamping Voltage:

19.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSB12ANT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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