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NRVFES6D

Onsemi

NRVFES6D by Onsemi

NRVFES6D by Onsemi is a single diode with ultra-fast recovery time of 0.045 us and max reverse current of 2 uA. It operates in temperatures ranging from -55 to 175 °C, making it suitable for applications requiring high-speed rectification. With a max output current of 6 A and reverse test voltage of 200 V, this small outline diode is ideal for use in automotive electronics meeting AEC-Q101 standards.

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Overview

Discover the NRVFES6D by Onsemi, a top-quality rectifier diode that delivers ultra-fast recovery for your electronic applications. With a maximum output current of 6A and a maximum reverse test voltage of 200V, this diode is designed for high-performance and reliability. Onsemi, a trusted manufacturer in the industry, ensures that this diode meets the highest standards of quality and durability. From automotive to industrial applications, the NRVFES6D offers exceptional value and benefits to customers looking for efficient and dependable rectifier diodes. Experience the advantages of this small outline package diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Simplifies the circuit design by using only one diode in the configuration.

Surface Mount: YES

Allows for easy and efficient installation on the PCB, saving space and time.

Maximum Reverse Recovery Time: 0.045 us

Ultra-fast recovery time ensures efficient performance and minimal power losses.

Maximum Reverse Current: 2 uA

Low reverse current minimizes power consumption and enhances efficiency.

Package Shape: RECTANGULAR

Simplifies the mounting process and provides a compact form factor.

Reverse Test Voltage: 200 V

Suitable for applications requiring high reverse voltage protection.

No. of Terminals: 3

Offers flexibility in connectivity options for various circuit designs.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications without compromising performance.

Application: ULTRA FAST RECOVERY

Designed for high-speed applications requiring quick recovery time.

Maximum Operating Temperature: 175 °C

Capable of operating in high-temperature environments without performance degradation.

Minimum Operating Temperature: -55 °C

Suitable for use in a wide range of temperature conditions.

Terminal Position: DUAL

Provides versatility in installation and connection options.

Case Connection: CATHODE

Allows for easy identification of the cathode terminal for correct orientation.

Reference Standard: AEC-Q101

Compliant with automotive industry standards for reliability and safety.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop minimizes power dissipation and enhances efficiency.

Maximum Output Current: 6 A

Capable of handling high current loads in various applications.

Terminal Form: FLAT

Facilitates easy soldering and connection to the PCB.

Maximum Repetitive Peak Reverse Voltage: 200 V

Provides reliable reverse voltage protection in repetitive peak conditions.

Maximum Non Repetitive Peak Forward Current: 80 A

Capable of handling high peak current surges for transient events.

Diode Element Material: SILICON

Silicon diodes offer stable and predictable performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers NRVFES6D attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.045 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

NRVFES6D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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