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NRVFES6G

Onsemi

NRVFES6G by Onsemi

NRVFES6G by Onsemi is a single diode with PLASTIC/EPOXY body, RECTANGULAR shape, and 400V reverse test voltage. It has 0.045us reverse recovery time, 2uA reverse current, and 1.2V max forward voltage. Ideal for ULTRA FAST RECOVERY applications with -55 to 175 °C operating temperature range.

Median Price

$1.430

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,990 parts In-Stock

1+ parts

$1.430

100+ parts

$0.596

1k+ parts

$0.388

10k+ parts

$0.342

4,990

$1.430

$0.596

$0.388

$0.342

DigiKey

USA . 3,662 parts In-Stock

1+ parts

$1.430

100+ parts

$0.596

1k+ parts

$0.423

10k+ parts

$0.387

3,662

$1.430

$0.596

$0.423

$0.387

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,215 parts In-Stock

1+ parts

$1.264

100+ parts

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$1.264

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Vyrian

USA . 1,284 parts In-Stock

1+ parts

$1.330

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1,284

$1.330

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Chip Stock

USA . 71,000 parts In-Stock

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,777 parts In-Stock

1+ parts

$1.197

100+ parts

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1,777

$1.197

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Corohmni

South Africa . 341 parts In-Stock

1+ parts

$1.330

100+ parts

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341

$1.330

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QUARKTWIN TECHNOLOGY LTD

USA . 12,232 parts In-Stock

1+ parts

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12,232

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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Problanco Electronics

Mexico . 5,068 parts In-Stock

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5,068

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TANS Electronics

Latvia . 2,777 parts In-Stock

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2,777

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SupplyDigital Components

Austria . 2,245 parts In-Stock

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2,245

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Kulean Microsystems

USA . 698 parts In-Stock

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698

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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588

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Overview

Discover the NRVFES6G diode by Onsemi, a high-quality product that offers fast recovery times and low reverse current for efficient performance. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for applications requiring ultra-fast recovery. With a maximum output current of 6A and a maximum reverse voltage of 400V, the NRVFES6G provides exceptional value and reliability to customers. Upgrade your electronic projects with this top-of-the-line diode for optimal results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability, making the diode suitable for various applications.

Maximum Reverse Recovery Time: 0.045 us

Ultra-fast reverse recovery time ensures efficient and quick switching, making it ideal for high-speed applications.

Maximum Reverse Current: 2 uA

Low reverse current indicates minimal power loss and improved efficiency in the diode's operation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in a wide range of environments and conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting alternating current (AC) to direct current (DC) efficiently, making it a versatile choice.

Technical Specifications

Diodes & Rectifiers NRVFES6G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.045 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVFES6G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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