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NRVBD660CTT4G

Onsemi

NRVBD660CTT4G by Onsemi

NRVBD660CTT4G by Onsemi is a fast recovery power diode with common cathode configuration. It has a max reverse voltage of 60V, forward voltage of 0.9V, and output current of 3A. Ideal for applications requiring high efficiency and quick response times in temperatures ranging from -65 to 175°C.

Median Price

$0.724

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 15,240 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.555

15,240

-

-

-

$0.555

Rochester

USA . 7,113 parts In-Stock

1+ parts

-

100+ parts

$0.724

1k+ parts

$0.601

10k+ parts

$0.535

7,113

-

$0.724

$0.601

$0.535

Verical

USA . 7,113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.751

10k+ parts

$0.669

7,113

-

-

$0.751

$0.669

Distributors (In-Stock)

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Digiode

USA . 2,490 parts In-Stock

1+ parts

$0.562

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2,490

$0.562

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Chip Stock

USA . 54,000 parts In-Stock

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54,000

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ComSIT Distribution GmbH

Germany . 4,870 parts In-Stock

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4,870

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ComSIT USA

USA . 4,870 parts In-Stock

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Vyrian

USA . 4,318 parts In-Stock

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4,318

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Distributors (Availability)

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Corohmni

South Africa . 467 parts In-Stock

1+ parts

$0.397

100+ parts

-

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467

$0.397

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Ampacity Inc.

Singapore . 6,106 parts In-Stock

1+ parts

$0.472

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6,106

$0.472

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Corphita

USA . 2,037 parts In-Stock

1+ parts

$0.533

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2,037

$0.533

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AZTECH Wire

Italy . 925 parts In-Stock

1+ parts

$20.010

100+ parts

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925

$20.010

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Continental Prestige Electronics

USA . 130,000 parts In-Stock

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$0.430

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130,000

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$0.430

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Perfect Parts

USA . 26,151 parts In-Stock

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26,151

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Lixinc

USA . 12,735 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 6,882 parts In-Stock

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6,882

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Problanco Electronics

Mexico . 6,035 parts In-Stock

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6,035

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Kulean Microsystems

USA . 5,604 parts In-Stock

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5,604

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TANS Electronics

Latvia . 3,597 parts In-Stock

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3,597

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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2,500

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Futuretech Components

Singapore . 526 parts In-Stock

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526

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Overview

Experience power like never before with the NRVBD660CTT4G diode rectifier from Onsemi. Designed with cutting-edge technology and manufactured to the highest standards, this product offers fast recovery power applications with a common cathode configuration. Its Schottky technology ensures maximum efficiency and reliability, delivering a peak forward current of 3A and a reverse test voltage of 60V. Say goodbye to limitations and hello to endless possibilities with the NRVBD660CTT4G diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient current flow and easy circuit integration.

Maximum Reverse Current: 100 uA

Low reverse current ensures energy efficiency and reliability.

Application: FAST RECOVERY POWER

Suitable for applications requiring fast recovery times and high power handling capabilities.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching, ideal for power efficiency.

Maximum Output Current: 3 A

Capable of handling high output currents, making it suitable for power applications.

Technical Specifications

Diodes & Rectifiers NRVBD660CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Minimum Breakdown Voltage:

60 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBD660CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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