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NRVBD1035CTLT4G

Onsemi

NRVBD1035CTLT4G by Onsemi

NRVBD1035CTLT4G by Onsemi is a Schottky rectifier diode with a max repetitive peak reverse voltage of 35V and max output current of 5A. It operates b/w -55 °C to 150°C, making it suitable for various applications requiring high efficiency and low forward voltage drop in a compact small outline package.

Median Price

$0.356

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,777 parts In-Stock

1+ parts

-

100+ parts

$0.335

1k+ parts

$0.278

10k+ parts

$0.248

1,777

-

$0.335

$0.278

$0.248

Verical

USA . 1,777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.377

10k+ parts

$0.310

1,777

-

-

$0.377

$0.310

Distributors (In-Stock)

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Chip Stock

USA . 27,000 parts In-Stock

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Vyrian

USA . 11,705 parts In-Stock

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Digiode

USA . 192 parts In-Stock

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192

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Distributors (Availability)

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AZTECH Wire

Italy . 864 parts In-Stock

1+ parts

$8.480

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864

$8.480

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RC Electronics

USA . 65,000 parts In-Stock

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65,000

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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5,500

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TANS Electronics

Latvia . 2,659 parts In-Stock

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2,659

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Kulean Microsystems

USA . 2,619 parts In-Stock

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2,619

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

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$0.164

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2,500

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$0.164

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Corphita

USA . 2,119 parts In-Stock

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Problanco Electronics

Mexico . 1,853 parts In-Stock

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1,853

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Kepictronics

USA . 1,694 parts In-Stock

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1,694

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SupplyDigital Components

Austria . 1,523 parts In-Stock

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1,523

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UHIMA Technologies

Türkiye . 294 parts In-Stock

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Corohmni

South Africa . 158 parts In-Stock

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Overview

Experience superior performance and reliability with the NRVBD1035CTLT4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch diodes & rectifiers like this one, designed for various applications. This common cathode, 2 element Schottky diode offers unmatched quality and efficiency. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 35V, this diode ensures optimal functionality. Trust Onsemi to provide cutting-edge technology and innovative solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards, saving space.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Efficiently rectifies alternating current (AC) to direct current (DC), ensuring smooth power delivery.

Technology: SCHOTTKY

Provides fast switching speeds and low forward voltage drop, leading to improved efficiency.

Technical Specifications

Diodes & Rectifiers NRVBD1035CTLT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBD1035CTLT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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