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NRVBB41H100CTT4G

Onsemi

NRVBB41H100CTT4G by Onsemi

NRVBB41H100CTT4G by Onsemi is a common cathode rectifier diode with 2 elements, featuring a max reverse current of 10uA and max repetitive peak reverse voltage of 100V. It is designed for efficiency applications, operating at a max temperature of 175 °C.

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Lifecycle Status

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Cyclops Electronics Ltd

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AZTECH Wire

Italy . 554 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Overview

Unlock the power of efficiency with the NRVBB41H100CTT4G diode by Onsemi. Crafted with precision and reliability in mind, this common cathode rectifier diode offers unparalleled performance in a compact package. Ideal for a wide range of applications, this diode ensures maximum output current of 20A and a maximum reverse voltage of 100V. Experience seamless operation and peace of mind knowing that you're getting a top-quality product that delivers exceptional value and benefits to your projects. Elevate your designs with the NRVBB41H100CTT4G diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and stable current flow with two elements sharing a common cathode.

Surface Mount: YES

Enables easy and convenient installation on circuit boards.

Maximum Reverse Current: 10 uA

Ensures minimal leakage current, enhancing the efficiency of the diodes.

Package Shape: RECTANGULAR

Optimal shape for fitting into compact spaces within electronic devices.

No. of Terminals: 2

Simplifies the wiring process and reduces complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Facilitates easy handling and integration into various electronic systems.

Application: EFFICIENCY

Specifically designed to enhance efficiency in electronic circuits and devices.

Maximum Operating Temperature: 175 °C

Capable of operating in high temperature environments without performance degradation.

Terminal Finish: MATTE TIN

Provides a secure and reliable contact surface for connections.

Terminal Position: SINGLE

Simplifies installation and connection processes.

Case Connection: CATHODE

Ensures proper polarity alignment for efficient operation.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration without damage.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Meets industry standards for quality and reliability, suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring proper current flow.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 20 A

Capable of handling high current loads, suitable for various electronic devices.

Terminal Form: GULL WING

Provides a secure and reliable connection interface.

No. of Elements: 2

Two diode elements enhance performance and reliability in circuit applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

Handles high reverse voltages, ensuring protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 350 A

Capable of handling high peak currents without damage.

Diode Element Material: SILICON

High-quality silicon material ensures reliable and consistent diode performance.

Technical Specifications

Diodes & Rectifiers NRVBB41H100CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBB41H100CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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