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NRVBB1060W1T4G

Onsemi

NRVBB1060W1T4G by Onsemi

NRVBB1060W1T4G by Onsemi is a Schottky rectifier diode with a max repetitive peak reverse voltage of 60V and max output current of 10A. It operates b/w -65 to 175 °C, making it suitable for high-efficiency applications. The diode's package style is small outline with gull wing terminals, designed for surface mount assembly.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 68,000 parts In-Stock

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Vyrian

USA . 12,544 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.151

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$0.137

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$0.124

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AZTECH Wire

Italy . 844 parts In-Stock

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$10.470

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Component Stockers USA

USA . 317 parts In-Stock

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$99.990

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Perfect Parts

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Kulean Microsystems

USA . 5,999 parts In-Stock

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SupplyDigital Components

Austria . 3,988 parts In-Stock

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Problanco Electronics

Mexico . 2,496 parts In-Stock

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TANS Electronics

Latvia . 1,850 parts In-Stock

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Corphita

USA . 1,389 parts In-Stock

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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Corohmni

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Overview

Discover the NRVBB1060W1T4G by Onsemi, a top-quality rectifier diode designed for efficiency in various applications. Manufactured by Onsemi, a trusted name in the industry, this diode offers customers reliability and performance. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 60V, this Schottky diode provides customers with the value and benefits they need for their projects. Upgrade your electronic designs with the NRVBB1060W1T4G and experience the advantages of Onsemi's superior technology and quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the design and improves reliability as there is no need to deal with complex circuitry for multiple components.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 100 uA

The low maximum reverse current ensures minimal power loss and improved efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to integrate into the overall circuit layout and provides a compact solution.

No. of Terminals: 2

The 2 terminals simplify the connection process and reduce the likelihood of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for a more streamlined circuit design.

Application: EFFICIENCY

Designed for efficiency, this product is suitable for applications where power conservation is key.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a secure connection.

Terminal Position: SINGLE

Single terminal position simplifies installation and enhances reliability by minimizing potential connection issues.

Case Connection: CATHODE

The case connection at the cathode simplifies circuit design and ensures proper polarity.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature helps prevent damage to the component during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability during the assembly process.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type provides efficient rectification of AC voltage, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

Low maximum forward voltage helps reduce power losses and improve energy efficiency in the circuit.

Maximum Output Current: 10 A

High maximum output current capability allows the product to handle high power loads effectively.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, improving overall efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides a sturdy connection and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a high maximum repetitive peak reverse voltage, this product can handle high voltage spikes without damage.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current allows the product to withstand surge currents without failure.

Diode Element Material: SILICON

The silicon diode element material provides reliable performance and high temperature stability in the circuit.

Technical Specifications

Diodes & Rectifiers NRVBB1060W1T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBB1060W1T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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