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NLX2G66MU3TCG

Onsemi

NLX2G66MU3TCG by Onsemi

NLX2G66MU3TCG by Onsemi is a CMOS differential multiplexer with 2 functions, 8 terminals, and 1.8V nominal voltage. It operates in temperatures ranging from -55 to 125 °C and offers fast switching times of 9-10 ns. Ideal for military-grade applications requiring small form factor and low on-state resistance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,419 parts In-Stock

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Digiode

USA . 1,319 parts In-Stock

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Problanco Electronics

Mexico . 4,715 parts In-Stock

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Kulean Microsystems

USA . 4,171 parts In-Stock

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SupplyDigital Components

Austria . 4,113 parts In-Stock

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Corphita

USA . 1,712 parts In-Stock

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TANS Electronics

Latvia . 1,329 parts In-Stock

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Corohmni

South Africa . 280 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Overview

Experience seamless and reliable performance with the NLX2G66MU3TCG by Onsemi, a top-notch manufacturer known for quality products. This multiplexer offers unparalleled efficiency and versatility in various applications, making it a valuable asset for your projects. With its innovative design and advanced technology, this product ensures optimal functionality and precision, providing you with the assurance of superior performance. Upgrade your systems with the NLX2G66MU3TCG and enjoy the benefits of a high-quality component that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

These materials are durable and can withstand a wide range of operating temperatures, making the product reliable and long-lasting.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

No. of Functions: 2

Provides versatility and flexibility in signal routing, allowing for multiple configurations to suit different applications.

Nominal Supply Voltage (Vsup): 1.8 V

Operates efficiently at a low voltage, offering energy savings and compatibility with various power sources.

Maximum Operating Temperature: 125 °C

Can function reliably in high-temperature environments, ensuring consistent performance in challenging conditions.

Technical Specifications

Multiplexers & Switches NLX2G66MU3TCG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

8

Nominal Off-state Isolation:

60 dB

Nominal On-state Resistance Match:

8 ohm

Maximum On-state Resistance (Ron):

30 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switch-off Time:

9 ns

Maximum Switch-on Time:

10 ns

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1 mm

Trade Compliance

NLX2G66MU3TCG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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