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NLX2G66EMUTCG

Onsemi

NLX2G66EMUTCG by Onsemi

NLX2G66EMUTCG by Onsemi is a CMOS differential multiplexer with 2 functions, operating at temperatures from -55 to 125 °C. With a max on-state resistance of 30 ohm, it has separate outputs and requires power supplies of 1.8/5V. This small outline package is ideal for military-grade applications requiring high-performance switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,216 parts In-Stock

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Digiode

USA . 746 parts In-Stock

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TANS Electronics

Latvia . 7,536 parts In-Stock

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Problanco Electronics

Mexico . 6,863 parts In-Stock

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SupplyDigital Components

Austria . 3,298 parts In-Stock

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Kulean Microsystems

USA . 2,708 parts In-Stock

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Corphita

USA . 955 parts In-Stock

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UHIMA Technologies

Türkiye . 827 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Overview

Upgrade your electronic devices with the NLX2G66EMUTCG by Onsemi, a top-tier manufacturer known for delivering high-quality components. This differential multiplexer offers seamless switching capabilities, making it ideal for a wide range of applications in the electronics industry. With its small outline package and separate output feature, this product ensures efficient performance and reliability. Experience the value and benefits of Onsemi's cutting-edge technology with the NLX2G66EMUTCG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

No. of Functions: 2

Having 2 functions in a single component increases functionality and versatility, providing more options for signal routing and control.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in demanding environments with elevated temperatures.

Technology: CMOS

The use of CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable for signal processing.

Technical Specifications

Multiplexers & Switches NLX2G66EMUTCG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-N8

Normal Position (V):

NO

No. of Functions:

2

No. of Terminals:

8

Maximum On-state Resistance (Ron):

30 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Sub-Category:

Multiplexer or Switches

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

NLX2G66EMUTCG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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