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NLVU1GT125AMUTCG

Onsemi

NLVU1GT125AMUTCG by Onsemi

NLVU1GT125AMUTCG by Onsemi is a 3-STATE bus driver with 6 terminals, operating at -55 to 125 °C. It has a supply voltage range of 1.65V to 5.5V and can handle up to 8A output current with a propagation delay of 16ns. Ideal for military applications requiring compact, low-power transceivers in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,368 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,595 parts In-Stock

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Digiode

USA . 1,099 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 1,813 parts In-Stock

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$0.380

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$0.190

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$0.110

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Microchip USA

USA . 7,171 parts In-Stock

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$0.750

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AZTECH Wire

Italy . 275 parts In-Stock

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$16.050

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Futuretech Components

Singapore . 31,000 parts In-Stock

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Problanco Electronics

Mexico . 6,467 parts In-Stock

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TANS Electronics

Latvia . 6,188 parts In-Stock

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iodParts Technologies Inc.

India . 5,773 parts In-Stock

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SupplyDigital Components

Austria . 5,008 parts In-Stock

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Kulean Microsystems

USA . 1,722 parts In-Stock

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Corphita

USA . 1,299 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Overview

Unleash the power of efficient signal transmission with the NLVU1GT125AMUTCG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This Bus Driver & Transceivers category gem is perfect for a wide range of applications. Elevate your projects with its exceptional value and benefits, offering customers seamless functionality, high performance, and unparalleled advantages. Say goodbye to worries and hello to innovation with the NLVU1GT125AMUTCG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight construction for the bus driver & transceiver.

Surface Mount: YES

Easy to install and saves space on the circuit board.

Screening Level: AEC-Q100

Ensures high quality and reliability suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage for efficient performance.

Load Capacitance (CL): 50 pF

Helps in maintaining signal integrity by providing appropriate capacitance.

Maximum I (ol): 8 Amp

Capable of handling high output current for robust operation.

Propagation Delay (tpd): 16 ns

Provides quick response time for data transmission.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for harsh environments.

Output Characteristics: 3-STATE

Offers flexibility in controlling the output signal.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme low temperature conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good conductivity and corrosion resistance.

No. of Ports: 2

Allows for multiple connections and data transfer.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Technical Specifications

Bus Driver & Transceivers NLVU1GT125AMUTCG attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Inputs:

1

No. of Ports:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay (tpd):

16 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLVU1GT125AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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