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NLVHC259ADR2G

Onsemi

NLVHC259ADR2G by Onsemi

NLVHC259ADR2G by Onsemi is a CMOS latch with 42ns propagation delay, 5V nominal voltage, and AEC-Q100 screening. Ideal for military applications due to -55 to 125 °C operating temperature range and small outline package style.

Median Price

$0.277

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7 parts In-Stock

1+ parts

$0.370

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-

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$0.159

7

$0.370

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$0.159

Rochester

USA . 2,390 parts In-Stock

1+ parts

-

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$0.184

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$0.152

10k+ parts

$0.136

2,390

-

$0.184

$0.152

$0.136

Distributors (In-Stock)

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Digiode

USA . 523 parts In-Stock

1+ parts

$0.143

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523

$0.143

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 4,000 parts In-Stock

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Vyrian

USA . 2,566 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.118

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491

$0.118

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Corphita

USA . 871 parts In-Stock

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$0.136

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871

$0.136

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Vigor

Singapore . 400 parts In-Stock

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$0.460

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400

$0.460

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,736 parts In-Stock

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SupplyDigital Components

Austria . 7,555 parts In-Stock

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Kulean Microsystems

USA . 6,374 parts In-Stock

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Kepictronics

USA . 5,500 parts In-Stock

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Continental Prestige Electronics

USA . 3,415 parts In-Stock

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$0.181

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3,415

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TANS Electronics

Latvia . 739 parts In-Stock

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739

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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Microchip USA

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Overview

Unlock a world of possibilities with the NLVHC259ADR2G by Onsemi. This high-quality latch & flip-flop from a trusted manufacturer offers reliable performance for a wide range of applications. With fast propagation delay and low power consumption, this product delivers value and efficiency to customers. Whether you're designing automotive systems or industrial equipment, this versatile component is sure to meet your needs. Experience seamless operation and superior functionality with the NLVHC259ADR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protects the internal components of the latch or flip-flop.

Propagation Delay At Nominal Supply: 42 ns

The low propagation delay ensures fast operation and response times, making this latch or flip-flop suitable for applications requiring quick switching.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage: 5V

Operates at a standard 5V supply voltage, making it compatible with a wide range of electronic systems and components.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the latch or flip-flop can withstand harsh environmental conditions without malfunctioning.

Technology: CMOS

Utilizes CMOS technology, known for its low power consumption and high noise immunity, making this latch or flip-flop energy-efficient and reliable.

Technical Specifications

Latches & Flip-Flops NLVHC259ADR2G attributes and parameters. Explore more Latches & Flip-Flops devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

42 ns

Propagation Delay (tpd):

175 ns

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

LOW LEVEL

Width:

3.9 mm

Trade Compliance

NLVHC259ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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