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NLVAS4599DTT1G

Onsemi

NLVAS4599DTT1G by Onsemi

NLVAS4599DTT1G by Onsemi is a SPDT multiplexer with 6 terminals, operating b/w -55 to 125 °C. It has a supply voltage range of 2-5.5 V and offers common output at 40 ohm resistance. Ideal for military-grade applications requiring fast switching with high isolation levels.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,643 parts In-Stock

1+ parts

$0.600

100+ parts

$0.358

1k+ parts

$0.214

10k+ parts

$0.186

6,643

$0.600

$0.358

$0.214

$0.186

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 731 parts In-Stock

1+ parts

$0.570

100+ parts

-

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731

$0.570

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Vyrian

USA . 449 parts In-Stock

1+ parts

$0.600

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449

$0.600

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Chip Stock

USA . 4,500 parts In-Stock

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4,500

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ComSIT Distribution GmbH

Germany . 615 parts In-Stock

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615

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Distributors (Availability)

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Vigor

Singapore . 145 parts In-Stock

1+ parts

$0.460

100+ parts

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145

$0.460

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Corphita

USA . 2,115 parts In-Stock

1+ parts

$0.540

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2,115

$0.540

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Corohmni

South Africa . 352 parts In-Stock

1+ parts

$0.600

100+ parts

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352

$0.600

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Microchip USA

USA . 2,164 parts In-Stock

1+ parts

$3.315

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2,164

$3.315

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SupplyDigital Components

Austria . 8,194 parts In-Stock

1+ parts

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8,194

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TANS Electronics

Latvia . 5,654 parts In-Stock

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5,654

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Kulean Microsystems

USA . 826 parts In-Stock

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826

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Problanco Electronics

Mexico . 714 parts In-Stock

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714

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UHIMA Technologies

Türkiye . 266 parts In-Stock

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266

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Overview

Experience seamless and efficient switching with the NLVAS4599DTT1G by Onsemi. Manufactured with top-notch quality and precision, this multiplexer offers unparalleled reliability and performance. Ideal for a wide range of applications, this product provides customers with exceptional value and benefits. Upgrade your systems with Onsemi's innovative technology and enjoy the advantages that this versatile component brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long operational lifespan.

Surface Mount: YES

Allows for easy and convenient installation on a circuit board.

Nominal Supply Voltage (Vsup): 4.5 V

Optimal voltage requirement for efficient operation.

No. of Terminals: 6

Sufficient terminals for connecting to other components in the circuit.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and fast switching speeds.

Technical Specifications

Multiplexers & Switches NLVAS4599DTT1G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NC

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

3 ohm

Maximum On-state Resistance (Ron):

40 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

COMMON OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Maximum Switch-off Time:

15 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width (mm):

1.5 mm

Trade Compliance

NLVAS4599DTT1G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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