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NLVAST4051DTR2G

Onsemi

NLVAST4051DTR2G by Onsemi

NLVAST4051DTR2G by Onsemi is an 8-function single-ended multiplexer with a max on-state resistance of 26 ohm. It operates b/w -55 to 125 °C and has a nominal voltage of 3 V. Ideal for military-grade applications requiring high isolation and fast switching times.

Median Price

$0.638

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,500 parts In-Stock

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$1.000

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7,500

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$1.000

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Flip Electronics (Authorized)

USA . 7,500 parts In-Stock

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7,500

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Rochester

USA . 2,011 parts In-Stock

1+ parts

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$0.615

1k+ parts

$0.510

10k+ parts

$0.455

2,011

-

$0.615

$0.510

$0.455

Verical

USA . 2,011 parts In-Stock

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$0.638

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2,011

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$0.638

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Distributors (In-Stock)

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Digiode

USA . 170 parts In-Stock

1+ parts

$0.479

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170

$0.479

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Vyrian

USA . 2,085 parts In-Stock

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$0.504

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2,085

$0.504

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Flip Electronics

USA . 7,500 parts In-Stock

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7,500

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Distributors (Availability)

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Corphita

USA . 318 parts In-Stock

1+ parts

$0.454

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318

$0.454

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Corohmni

South Africa . 305 parts In-Stock

1+ parts

$0.504

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305

$0.504

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Vigor

Singapore . 315 parts In-Stock

1+ parts

$0.540

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315

$0.540

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Problanco Electronics

Mexico . 8,284 parts In-Stock

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TANS Electronics

Latvia . 5,018 parts In-Stock

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SupplyDigital Components

Austria . 3,339 parts In-Stock

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Kulean Microsystems

USA . 1,117 parts In-Stock

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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956

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Microchip USA

USA . 493 parts In-Stock

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493

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Overview

Discover the NLVAST4051DTR2G by Onsemi, a high-quality multiplexer & switch designed to optimize your electronic applications. With Onsemi's reputation for reliability and innovation, this product offers unmatched value and performance. Ideal for a wide range of uses, this versatile component ensures seamless operation and precise control. Upgrade your projects with the NLVAST4051DTR2G and experience the benefits of superior quality and efficiency in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Surface mount option allows for easy installation and space-saving on PCBs.

No. of Functions: 8

With 8 functions, this multiplexer provides versatility and flexibility in signal routing.

Nominal Supply Voltage (Vsup): 3 V

Operating at a voltage of 3V makes it compatible with standard power supplies.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in demanding environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Multiplexers & Switches NLVAST4051DTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-6.6 V

Minimum Negative Supply Voltage (Vsup):

-2.5 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

1

No. of Functions:

8

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

10 ohm

Maximum On-state Resistance (Ron):

26 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

6.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

50 ns

Maximum Switch-on Time:

50 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

NLVAST4051DTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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