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NLVACT541DWR2G

Onsemi

NLVACT541DWR2G by Onsemi

NLVACT541DWR2G by Onsemi is an 8-bit bus driver with a supply voltage of 5V, featuring 3-STATE output and 8ns propagation delay. Ideal for industrial applications, this CMOS technology device has a temperature range from -40 to 85 °C and comes in a small outline package.

Median Price

$0.494

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,000 parts In-Stock

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$0.494

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$0.453

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$0.494

$0.453

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Digiode

USA . 278 parts In-Stock

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$1.064

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Flip Electronics

USA . 21,000 parts In-Stock

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Vyrian

USA . 3,969 parts In-Stock

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Corphita

USA . 2,060 parts In-Stock

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$1.008

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Corohmni

South Africa . 470 parts In-Stock

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$1.120

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470

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Problanco Electronics

Mexico . 5,676 parts In-Stock

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Microchip USA

USA . 4,942 parts In-Stock

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TANS Electronics

Latvia . 4,012 parts In-Stock

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SupplyDigital Components

Austria . 2,435 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,086 parts In-Stock

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Kulean Microsystems

USA . 1,041 parts In-Stock

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Vigor

Singapore . 446 parts In-Stock

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UHIMA Technologies

Türkiye . 179 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the NLVACT541DWR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality bus drivers & transceivers that are perfect for a wide range of applications. With its 3-STATE output characteristics and true output polarity, this product ensures seamless operation and optimal efficiency. Trust in Onsemi's expertise and innovation to provide you with a cutting-edge solution that meets all your needs. Upgrade your systems today and see the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transceiver, making it suitable for rugged environments.

No. of Bits: 8

Provides sufficient data transmission capacity for various bus communication applications.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard power supplies, ensuring easy integration into existing systems.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature conditions, making it suitable for a wide range of applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Bus Driver & Transceivers NLVACT541DWR2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

12.8 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

8 ns

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

NLVACT541DWR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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