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NLV14517BDWR2G

Onsemi

NLV14517BDWR2G by Onsemi

NLV14517BDWR2G by Onsemi is a 64-bit digital shift register with 770 ns propagation delay. Operating at -55 to 125 °C, it has a max frequency of 1.5 MHz and supports AEC-Q100 screening level. Ideal for military applications requiring TRUE output polarity and positive edge trigger type in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,499 parts In-Stock

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8,499

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Digiode

USA . 260 parts In-Stock

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260

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Vigor

Singapore . 170 parts In-Stock

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$1.050

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170

$1.050

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AZTECH Wire

Italy . 45 parts In-Stock

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$9.770

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Component Stockers USA

USA . 7,670 parts In-Stock

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$14.320

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QUARKTWIN TECHNOLOGY LTD

USA . 14,790 parts In-Stock

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14,790

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TANS Electronics

Latvia . 7,075 parts In-Stock

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SupplyDigital Components

Austria . 3,569 parts In-Stock

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Kulean Microsystems

USA . 2,882 parts In-Stock

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Problanco Electronics

Mexico . 2,715 parts In-Stock

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Corphita

USA . 121 parts In-Stock

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Overview

Discover the power of innovation with the NLV14517BDWR2G by Onsemi, a top-quality digital shift register that sets the standard for excellence in performance and reliability. This versatile component boasts a wide range of applications, delivering unparalleled value to customers seeking cutting-edge solutions for their projects. With Onsemi's trusted reputation for superior manufacturing, you can trust that this product will exceed your expectations, offering seamless integration and exceptional results. Upgrade your technology with the NLV14517BDWR2G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the shift register, making it suitable for various applications and environments.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on printed circuit boards, saving space and simplifying manufacturing processes.

No. of Functions: 2

Having multiple functions in one device can increase efficiency and versatility in circuit design.

Package Shape: RECTANGULAR

Rectangular package shape provides compatibility with standard PCB layouts and facilitates easy integration into existing systems.

No. of Bits: 64

A high number of bits allows for complex data storage and processing capabilities, making this shift register suitable for advanced applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this shift register compatible with a wide range of systems and components.

Output Characteristics: 3-STATE

3-STATE output allows for a high degree of flexibility in controlling the output signals, enabling efficient signal routing and management.

Minimum Operating Temperature: -55 °C

This shift register can operate reliably in extreme low-temperature environments, expanding its potential applications.

Maximum Frequency At Nominal Supply: 1500000 Hz

High operating frequency capability enables fast data processing and communication, making this shift register suitable for high-speed applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance and efficiency of the shift register.

Technical Specifications

Digital Shift Registers NLV14517BDWR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

16-BIT, 32-BIT AND 48-BIT OUTPUT ALSO AVAILABLE

Count Direction:

RIGHT

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

1500000 Hz

Moisture Sensitivity Level (MSL):

3

No. of Bits:

64

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay (tpd):

770 ns

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

POSITIVE EDGE

Width:

7.5 mm

Minimum fmax:

5.3 MHz

Trade Compliance

NLV14517BDWR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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