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NJD1718T4G

Onsemi

NJD1718T4G by Onsemi

NJD1718T4G by Onsemi is a PNP BJT transistor with 2A max collector current, 15W power dissipation, and 80MHz transition frequency. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 50V.

Median Price

$0.272

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 15,000 parts In-Stock

1+ parts

$0.272

100+ parts

-

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$0.245

15,000

$0.272

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$0.245

Mouser Electronics

USA . 13,598 parts In-Stock

1+ parts

$1.050

100+ parts

$0.358

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-

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13,598

$1.050

$0.358

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Rochester

USA . 3,788 parts In-Stock

1+ parts

-

100+ parts

$0.268

1k+ parts

$0.222

10k+ parts

$0.198

3,788

-

$0.268

$0.222

$0.198

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

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$0.197

2,500

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$0.197

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

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$0.160

2,500

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$0.160

Flip Electronics (Authorized)

USA . 2,500 parts In-Stock

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2,500

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Chip1Stop

Japan . 2,395 parts In-Stock

1+ parts

-

100+ parts

$0.428

1k+ parts

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$0.268

2,395

-

$0.428

-

$0.268

Verical

USA . 2,395 parts In-Stock

1+ parts

-

100+ parts

$0.371

1k+ parts

$0.263

10k+ parts

$0.202

2,395

-

$0.371

$0.263

$0.202

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,162 parts In-Stock

1+ parts

$0.208

100+ parts

-

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1,162

$0.208

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Chip Stock

USA . 77,000 parts In-Stock

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77,000

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Vyrian

USA . 3,682 parts In-Stock

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3,682

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,678 parts In-Stock

1+ parts

$0.167

100+ parts

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3,678

$0.167

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Semicontronic

India . 3,678 parts In-Stock

1+ parts

$0.167

100+ parts

$0.163

1k+ parts

$0.162

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3,678

$0.167

$0.163

$0.162

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Corohmni

South Africa . 238 parts In-Stock

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$0.197

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238

$0.197

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Corphita

USA . 1,644 parts In-Stock

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$0.197

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1,644

$0.197

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Aztec Data Supply Inc.

USA . 1,721 parts In-Stock

1+ parts

$1.640

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1,721

$1.640

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Perfect Parts

USA . 12,825 parts In-Stock

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12,825

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SupplyDigital Components

Austria . 5,452 parts In-Stock

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Problanco Electronics

Mexico . 4,559 parts In-Stock

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4,559

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Assy Fe

Spain . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,152 parts In-Stock

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Argo Parts USA

USA . 2,803 parts In-Stock

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Kepictronics

USA . 1,500 parts In-Stock

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Continental Prestige Electronics

USA . 1,406 parts In-Stock

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TANS Electronics

Latvia . 1,284 parts In-Stock

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Lixinc

USA . 1,050 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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650

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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649

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Overview

Discover the power of the NJD1718T4G by Onsemi, a top-quality Power Bipolar Junction Transistor perfect for switching applications. With Onsemi's reputation for excellence in manufacturing, this PNP transistor offers customers reliability and superior performance. Its small outline package and high transition frequency make it ideal for various electronic devices. Experience the benefits of this product, including a maximum collector-emitter voltage of 50V, maximum power dissipation of 15W, and a minimum DC current gain of 40. Upgrade your electronics with the NJD1718T4G and enjoy efficient and effective operation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this transistor suitable for various switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate the transistor into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Surface Mount: YES

Surface mount design enables easy and compact installation on PCBs, making it suitable for high-density electronic applications.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capability, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

Operating at high temperatures, this transistor can withstand harsh environmental conditions, making it suitable for industrial and automotive applications.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD1718T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD1718T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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