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NHP820MFDT3G

Onsemi

NHP820MFDT3G by Onsemi

NHP820MFDT3G by Onsemi is a diode with PLASTIC/EPOXY body, 0.028 us reverse recovery time, and 4 A output current. Ideal for ULTRA FAST RECOVERY POWER applications, it has a max operating temperature of 175 °C and -55 °C min.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,585 parts In-Stock

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Digiode

USA . 540 parts In-Stock

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540

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SupplyDigital Components

Austria . 6,254 parts In-Stock

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Kulean Microsystems

USA . 4,358 parts In-Stock

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TANS Electronics

Latvia . 3,736 parts In-Stock

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Problanco Electronics

Mexico . 1,757 parts In-Stock

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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Corphita

USA . 729 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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Overview

Elevate your power management solutions with the NHP820MFDT3G by Onsemi. Built with precision and reliability in mind, this diode rectifier offers superior performance in ultra-fast recovery power applications. Its advanced design and quality construction ensure optimal functionality and efficiency, making it a top choice for professionals seeking high-performance components. Whether you're looking to enhance your electronic projects or streamline your industrial applications, the NHP820MFDT3G delivers unmatched value and benefits that will elevate your work to new heights. Choose Onsemi for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making them suitable for various applications.

Config: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more flexibility in circuit design and better performance in different scenarios.

Surface Mount: YES

Surface mount capability makes it easier to integrate the diodes onto PCBs, saving space and allowing for more efficient circuit layouts.

Maximum Reverse Recovery Time: 0.028 us

The ultra-fast reverse recovery time ensures minimal loss in power conversion, making this diode ideal for high-speed applications.

Maximum Reverse Current: 0.5 uA

Low reverse current minimizes power loss and improves efficiency in the circuit.

Terminal Position: DUAL

Dual terminal position provides easier connectivity and allows for more flexible installation options.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC current, making them essential for power supply applications.

Maximum Forward Voltage (VF): 1.09 V

Low forward voltage drop ensures efficient power conversion with minimal energy loss.

Technical Specifications

Diodes & Rectifiers NHP820MFDT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.09 V

JESD-30 Code:

R-PDSO-F6

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.028 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NHP820MFDT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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