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NHP820MFDT1G

Onsemi

NHP820MFDT1G by Onsemi

NHP820MFDT1G by Onsemi is a diode with 2 elements, featuring a max reverse recovery time of 0.028 us and max forward voltage of 1.09 V. Ideal for ultra-fast recovery power applications, it operates b/w -55 to 175 °C and has a max output current of 4 A.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,177 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 5,640 parts In-Stock

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SupplyDigital Components

Austria . 3,103 parts In-Stock

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Problanco Electronics

Mexico . 1,905 parts In-Stock

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Corphita

USA . 1,640 parts In-Stock

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TANS Electronics

Latvia . 1,423 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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UHIMA Technologies

Türkiye . 16 parts In-Stock

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Overview

Unlock the power of advanced technology with the NHP820MFDT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Diodes & Rectifiers that are designed for superior performance in ultra-fast recovery power applications. With a maximum output current of 4A and a maximum reverse recovery time of 0.028us, this product offers exceptional value and reliability. Trust Onsemi to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan and reliability.

Config: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more efficient and versatile circuit designs.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.028 us

Ultra fast reverse recovery time ensures minimal energy loss and efficient performance.

Maximum Reverse Current: 0.5 uA

Low reverse current indicates high efficiency and reliability of the diodes.

Package Shape: RECTANGULAR

Rectangular shape is commonly used in electronic components, making it easy to integrate into various designs.

No. of Terminals: 6

Having 6 terminals allows for flexible connection options and compatibility with different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and makes the diodes suitable for portable and space-constrained applications.

Application: ULTRA FAST RECOVERY POWER

Designed for high-speed and high-power applications, making it ideal for demanding electronic devices.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold environments, providing versatility in application.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good solderability for easy and reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and installation options.

Case Connection: CATHODE

Cathode case connection simplifies circuit polarity identification and installation.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used for converting AC to DC, making this product suitable for power conversion applications.

Maximum Forward Voltage (VF): 1.09 V

Low forward voltage drop ensures energy efficiency and minimal power loss in the circuit.

Maximum Output Current: 4 A

High maximum output current capability allows for powering a wide range of electronic devices and components.

Terminal Form: FLAT

Flat terminal form provides easy and secure connections, enhancing the overall reliability of the diodes.

No. of Elements: 2

Having 2 elements in the diode structure allows for efficient power handling and performance.

Maximum Repetitive Peak Reverse Voltage: 200 V

High peak reverse voltage rating ensures protection against voltage spikes and fluctuations in the circuit.

Maximum Non Repetitive Peak Forward Current: 80 A

High peak forward current capability allows for handling sudden surges in current without damage to the diodes.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency, reliability, and temperature resistance for stable and consistent performance.

Technical Specifications

Diodes & Rectifiers NHP820MFDT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.09 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.028 us

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NHP820MFDT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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