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NE521DG

Onsemi

NE521DG by Onsemi

NE521DG by Onsemi is a comparator with 2 functions, featuring a max input offset voltage of 10000 uV and max average bias current of 40 uA. It operates at temperatures b/w 0-70 °C and has a response time of 9.6 ns. Ideal for applications requiring precise voltage comparisons in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,861 parts In-Stock

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Digiode

USA . 220 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 157 parts In-Stock

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Pegasus Components GmbH

Germany . 51 parts In-Stock

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AZTECH Wire

Italy . 649 parts In-Stock

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$9.400

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649

$9.400

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A-Z Elektronik GmbH

Germany . 4,812 parts In-Stock

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Microchip USA

USA . 4,693 parts In-Stock

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TANS Electronics

Latvia . 4,465 parts In-Stock

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Problanco Electronics

Mexico . 3,993 parts In-Stock

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Kulean Microsystems

USA . 2,720 parts In-Stock

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SupplyDigital Components

Austria . 2,538 parts In-Stock

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Corphita

USA . 780 parts In-Stock

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780

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Perfect Parts

USA . 653 parts In-Stock

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Vigor

Singapore . 624 parts In-Stock

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Corohmni

South Africa . 453 parts In-Stock

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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Lixinc

USA . 328 parts In-Stock

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328

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Overview

The NE521DG by Onsemi is a top-quality comparator that offers precision and reliability for a wide range of applications. Onsemi, known for its exceptional manufacturing standards, delivers a product that meets the highest industry benchmarks. Whether used in automotive systems, industrial controls, or consumer electronics, this comparator ensures optimal performance. With features like low bias current and fast response times, the NE521DG provides excellent value and benefits to customers seeking high-performance components for their projects. Trust Onsemi for quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the comparator.

Maximum Input Offset Voltage: 10000 uV

The high maximum input offset voltage allows for accurate comparisons between input signals, making this comparator suitable for precision applications.

Maximum Average Bias Current (IIB): 40 uA

Low bias current ensures minimal power consumption and accurate results in analog signal processing.

Surface Mount: YES

Being surface mountable enables easy and efficient integration onto a circuit board, saving space and simplifying assembly.

No. of Functions: 2

Having two functions provides flexibility in signal processing and allows for more complex circuit designs.

Nominal Supply Voltage / Vsup (V): 5

A 5V nominal supply voltage ensures compatibility with standard power sources and makes it easy to integrate into existing systems.

Power Supplies (V): +-5

The dual power supply option allows for versatile operation and compatibility with different power sources.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and install in a circuit layout.

Maximum Supply Voltage Limit: 7 V

The high supply voltage limit provides a safety margin for the comparator and ensures reliable performance under varying operating conditions.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this comparator can be used in a wide range of environments without risk of overheating.

Technical Specifications

Comparators NE521DG attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Totem Pole

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

40 uA

Maximum Bias Current (IIB) @25 °C:

20 uA

Operational Characteristics

Maximum Supply Current:

35 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Reflow Peak Time Limit:

40

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

9.6 ns

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

NE521DG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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