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NE522N

Onsemi

NE522N by Onsemi

NE522N by Onsemi is a comparator with 2 functions, 14 terminals, and open-collector output. It operates at -7V to +7V supply voltage range, with response time of 10ns. Ideal for applications requiring fast response times and precise voltage comparisons in commercial temperature environments.

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First Choice Components Inc.

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Fibra_Brandt Electronic GMBH

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Digital Electronic Gebert Verwaltungs UG

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Bristol Electronics

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Sunrise Surplus Inc.

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LittleDiode

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Corel Iberica Componentes, S.L.

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One Stop Electronics

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Overview

Experience unmatched precision and reliability with the NE522N comparator by Onsemi. With a reputation for excellence, Onsemi delivers top-quality products that are trusted by industry professionals worldwide. The NE522N boasts a wide range of applications, from industrial automation to consumer electronics. Offering exceptional performance and efficiency, this comparator provides customers with unparalleled value and peace of mind. Upgrade your projects with the NE522N and discover the advantages of working with a premium product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Maximum Input Offset Voltage: 10000 uV

High input offset voltage tolerance for accurate comparison.

Maximum Average Bias Current (IIB): 0.04 uA

Low bias current ensures minimal power consumption.

No. of Functions: 2

Can perform multiple functions efficiently.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for compatibility with most systems.

Output Type: OPEN-COLLECTOR

Open-collector output for versatile applications.

Nominal Response Time: 10 ns

Fast response time for real-time comparison operations.

Temperature Grade: COMMERCIAL

Suitable for commercial temperature range applications.

Amplifier Type: COMPARATOR

Specifically designed for comparing input signals.

Technical Specifications

Comparators NE522N attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Power Supply:

±5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

40 nA

Maximum Bias Current (IIB) @25 °C:

40 uA

Operational Characteristics

Maximum Supply Current:

35 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Nominal Response Time:

10 ns

Physical Characteristics

Length:

0.728 in (18.48 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.185 in (4.69 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

NE522N Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-139-0700, 5962011390700, 5962-01-108-8021, 5962011088021

NIIN

011390700, 011088021

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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