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NDTL1N60ZT1G

Onsemi

NDTL1N60ZT1G by Onsemi

NDTL1N60ZT1G by Onsemi is a Power FET with N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. It has a max drain current of 0.3A, power dissipation of 3W, and operates up to 150 °C. Ideal for applications requiring efficient power management in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,271 parts In-Stock

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Vyrian

USA . 900 parts In-Stock

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900

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TANS Electronics

Latvia . 8,127 parts In-Stock

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SupplyDigital Components

Austria . 7,935 parts In-Stock

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Problanco Electronics

Mexico . 7,739 parts In-Stock

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Kulean Microsystems

USA . 1,645 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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Corphita

USA . 670 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Unlock the power of innovation with the NDTL1N60ZT1G Power Field Effect Transistor by Onsemi. Designed to deliver exceptional quality and reliability, this N-CHANNEL FET offers unmatched performance for a wide range of applications. With a maximum drain current of 0.3A and a power dissipation of 3W, this transistor is perfect for demanding electronic circuits. Trust Onsemi's expertise in semiconductor technology to bring you cutting-edge solutions that provide value and efficiency. Elevate your designs with the NDTL1N60ZT1G and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower on-resistance and higher efficiency compared to P-CHANNEL FETs, making them suitable for many applications.

Configuration: SINGLE

Single configuration FETs are simpler to use and integrate into circuits, making them ideal for straightforward applications.

Surface Mount: YES

Surface Mount FETs are easier to handle, compact, and enable high-density circuit designs, making them suitable for modern electronics.

Maximum Drain Current (Abs) (ID): 0.3 A

The high maximum drain current capability of 0.3A allows this FET to handle higher power loads and deliver reliable performance.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this FET can efficiently dissipate heat and operate under high power conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer good switching characteristics, low gate capacitance, and high input impedance, making them suitable for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this FET to withstand elevated temperatures and harsh environments without compromising performance.

Maximum Drain Current (ID): 0.3 A

Having a maximum drain current of 0.3A ensures that the FET can handle current flow effectively and reliably in demanding applications.

Technical Specifications

Power Field Effect Transistors (FET) NDTL1N60ZT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.3 A

Maximum Drain Current (ID):

.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

3 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

NDTL1N60ZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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