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NDC100170A

Onsemi

NDC100170A by Onsemi

The Onsemi NDC100170A is a single Schottky rectifier diode with 1700V reverse test voltage and 145A max output current. It operates b/w -55 to 175 °C, dissipating up to 1666W power. Ideal for high-efficiency applications due to its silicon carbide material and surface-mount capability in square package shape.

Median Price

$43.570

Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,232 parts In-Stock

1+ parts

-

100+ parts

$37.740

1k+ parts

$33.770

10k+ parts

$31.780

2,232

-

$37.740

$33.770

$31.780

Verical

USA . 2,232 parts In-Stock

1+ parts

-

100+ parts

$49.400

1k+ parts

$44.200

10k+ parts

-

2,232

-

$49.400

$44.200

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,664 parts In-Stock

1+ parts

$41.828

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-

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1,664

$41.828

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Vyrian

USA . 4,446 parts In-Stock

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4,446

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 872 parts In-Stock

1+ parts

$16.880

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-

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872

$16.880

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Corphita

USA . 1,846 parts In-Stock

1+ parts

$39.627

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1,846

$39.627

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Corohmni

South Africa . 406 parts In-Stock

1+ parts

$44.030

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406

$44.030

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TANS Electronics

Latvia . 7,883 parts In-Stock

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7,883

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SupplyDigital Components

Austria . 6,009 parts In-Stock

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6,009

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Kulean Microsystems

USA . 5,336 parts In-Stock

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5,336

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 1,699 parts In-Stock

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1,699

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UHIMA Technologies

Türkiye . 897 parts In-Stock

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897

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Overview

Discover the power and efficiency of the Onsemi NDC100170A diode rectifier. Manufactured by a trusted name in the industry, this high-quality product offers unmatched reliability and performance. Ideal for applications where efficiency is key, this diode boasts a maximum output current of 145 A and a maximum reverse test voltage of 1700 V. With its advanced Schottky technology and no lead terminal form, the NDC100170A provides customers with value, benefits, and advantages that will elevate their projects to new heights. Choose Onsemi for superior quality and innovation in diodes and rectifiers.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy installation and connections, simplifying the circuit design process.

Surface Mount: YES

Surface mount capability enables compact and efficient PCB layout, saving space and improving overall system efficiency.

Maximum Reverse Current: 40 uA

Low maximum reverse current ensures minimal power loss and improved energy efficiency.

Package Shape: SQUARE

Square package shape provides a stable and secure mounting option, ensuring reliable performance under various operating conditions.

Reverse Test Voltage: 1700 V

High reverse test voltage capability offers robust protection against reverse voltage spikes and ensures device durability.

Package Style (Meter): UNCASED CHIP

Uncased chip package style allows for easy integration into custom applications and provides flexibility in mounting options.

Application: EFFICIENCY

Designed for efficiency applications, this product is suitable for high-performance systems that require minimal power loss and maximum energy savings.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature capability ensures operation in extreme cold conditions without any performance degradation.

Terminal Position: UPPER

Upper terminal position facilitates easy and secure connections, enabling quick and hassle-free installation.

Maximum Power Dissipation: 1666 W

High maximum power dissipation capability allows for handling large power loads without the risk of overheating or failure.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power, making it ideal for rectification and power supply applications.

Maximum Output Current: 145 A

High maximum output current capacity enables the device to handle heavy loads and high current requirements with ease.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speed, resulting in improved efficiency and reduced power loss.

Terminal Form: NO LEAD

No lead terminal form simplifies the installation process and ensures secure connections without the need for additional soldering.

Maximum Repetitive Peak Reverse Voltage: 1700 V

High maximum repetitive peak reverse voltage capability protects the device against reverse voltage surges and ensures long-term reliability.

Maximum Non-Repetitive Peak Forward Current: 574 A

High maximum non-repetitive peak forward current handling capacity allows the device to withstand short-duration high current pulses without damage.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers superior thermal performance and high temperature tolerance, making the device suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers NDC100170A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

574 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

145 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Power Dissipation:

1666 W

Maximum Repetitive Peak Reverse Voltage:

1700 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

1700 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NDC100170A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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