Loading...

NDC10170A

Onsemi

NDC10170A by Onsemi

The Onsemi NDC10170A is a Schottky rectifier diode with 1700V reverse test voltage and 16A output current. It operates b/w -55 to 175 °C, dissipating up to 185W power. Ideal for efficiency applications, this surface-mount diode has a max forward voltage of 1.5V and non-repetitive peak forward current of 105A.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,016

-

-

-

-

Vyrian

USA . 703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

703

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,379

-

-

-

-

SupplyDigital Components

Austria . 6,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,239

-

-

-

-

Kulean Microsystems

USA . 3,297 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,297

-

-

-

-

Problanco Electronics

Mexico . 2,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,096

-

-

-

-

Corphita

USA . 646 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

646

-

-

-

-

UHIMA Technologies

Türkiye . 613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

613

-

-

-

-

Corohmni

South Africa . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

Overview

Experience efficiency like never before with the NDC10170A by Onsemi, a high-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a leading name in the industry, this diode is designed for applications where efficiency is key. With a maximum reverse voltage of 1700 V and a maximum output current of 16 A, this Schottky diode delivers exceptional power dissipation of 185 W. Say goodbye to inefficiency and hello to innovation with the NDC10170A - the perfect solution for all your rectification needs.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and saves space.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards.

Maximum Reverse Current: 40 uA

Low maximum reverse current ensures efficiency and minimal power loss.

Package Shape: SQUARE

Square package shape provides stability and ease of mounting.

Reverse Test Voltage: 1700 V

High reverse test voltage ensures reliability and safety in high voltage applications.

Package Style (Meter): UNCASED CHIP

Uncased chip package style allows for flexibility in mounting and integration.

Application: EFFICIENCY

Designed for efficiency in various applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures performance in extreme cold conditions.

Terminal Position: UPPER

Upper terminal position facilitates easy connection in circuit design.

Maximum Power Dissipation: 185 W

High maximum power dissipation allows for handling of high power applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type for converting AC to DC efficiently.

Maximum Forward Voltage (VF): 1.5 V

Low maximum forward voltage ensures minimal energy loss during operation.

Maximum Output Current: 16 A

High maximum output current capability for handling large loads.

Technology: SCHOTTKY

Schottky technology for high efficiency and fast operation.

Terminal Form: NO LEAD

No lead terminal form for compact design and easy installation.

Maximum Repetitive Peak Reverse Voltage: 1700 V

High maximum repetitive peak reverse voltage for reliable operation in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 105 A

High maximum non repetitive peak forward current for handling sudden surge currents.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material for high efficiency and durability.

Technical Specifications

Diodes & Rectifiers NDC10170A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

105 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

16 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Power Dissipation:

185 W

Maximum Repetitive Peak Reverse Voltage:

1700 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

1700 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NDC10170A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1