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NCV2904DMR2

Onsemi

NCV2904DMR2 by Onsemi

NCV2904DMR2 by Onsemi is an Op Amp with 7000uV Max Input Offset Voltage, 70dB Nominal CMRR, and 15000 Min Voltage Gain. Ideal for automotive applications due to AEC-Q100 screening and -40 to 125 °C operating temp range. It features a VOLTAGE-FEEDBACK architecture in a small outline package with dual terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 4,226 parts In-Stock

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Digiode

USA . 1,849 parts In-Stock

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AZTECH Wire

Italy . 450 parts In-Stock

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$18.660

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SupplyDigital Components

Austria . 8,206 parts In-Stock

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Problanco Electronics

Mexico . 7,640 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,242 parts In-Stock

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TANS Electronics

Latvia . 7,203 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 2,384 parts In-Stock

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Kepictronics

USA . 818 parts In-Stock

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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Microchip USA

USA . 353 parts In-Stock

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Corohmni

South Africa . 254 parts In-Stock

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Overview

Discover unparalleled performance and reliability with the NCV2904DMR2 by Onsemi. As a leading manufacturer in the industry, Onsemi's operational amplifiers are trusted for their quality and precision engineering. The NCV2904DMR2 is ideal for a wide range of applications, offering customers exceptional value and benefits. Whether you're looking for high voltage gain, low bias current, or precise frequency compensation, this amplifier delivers it all. Elevate your projects with the NCV2904DMR2 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for a variety of environments.

Maximum Input Offset Voltage: 7000 uV

Low offset voltage ensures accurate signal processing and minimal distortion.

Maximum Average Bias Current (IIB): -0.5 uA

Low bias current helps in maintaining stability and efficiency of the operational amplifier.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and simplifying the assembly process.

No. of Functions: 2

Multiple functions enhance versatility and capability of the operational amplifier, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Stable nominal supply voltage ensures consistent performance and reliability.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise in signal processing, making the amplifier suitable for high-performance applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed as an operational amplifier, providing efficient signal amplification and processing capabilities.

Technical Specifications

Operational Amplifiers (Op Amps) NCV2904DMR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±13/3/26 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

15000

Peak Bias Current:

-500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

NCV2904DMR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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