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NCV20061SQ3T2G

Onsemi

NCV20061SQ3T2G by Onsemi

NCV20061SQ3T2G by Onsemi is a CMOS operational amplifier with a max input offset voltage of 4000 uV. It has a nominal unity gain bandwidth of 3000 kHz and operates at temperatures ranging from -40 to 125 °C. This amplifier is commonly used in automotive applications due to its AEC-Q100 screening level.

Median Price

$0.419

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Mouser Electronics

USA . 17,301 parts In-Stock

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$0.490

100+ parts

$0.269

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$0.228

10k+ parts

$0.215

17,301

$0.490

$0.269

$0.228

$0.215

DigiKey

USA . 5,396 parts In-Stock

1+ parts

$0.490

100+ parts

$0.268

1k+ parts

$0.228

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$0.207

5,396

$0.490

$0.268

$0.228

$0.207

Verical

USA . 57,000 parts In-Stock

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$0.189

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Flip Electronics (Authorized)

USA . 8,398 parts In-Stock

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8,398

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Arrow

USA . 3,000 parts In-Stock

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$0.262

3,000

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Chip1Stop

Japan . 2,329 parts In-Stock

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$0.419

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$0.353

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2,329

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$0.419

$0.353

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Ozdisan Elektronik

Türkiye . 3,000 parts In-Stock

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$0.344

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3,000

$0.344

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Digiode

USA . 513 parts In-Stock

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$0.570

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513

$0.570

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Flip Electronics

USA . 65,398 parts In-Stock

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Vyrian

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NAC Semi

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$0.578

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Nova Conductors

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Ampacity Inc.

Singapore . 8,427 parts In-Stock

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Semicontronic

India . 8,218 parts In-Stock

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$0.251

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$0.245

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$0.243

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Corohmni

South Africa . 230 parts In-Stock

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Corphita

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$0.540

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Vigor

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$0.660

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Aztec Data Supply Inc.

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$3.676

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Kulean Microsystems

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Microchip USA

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SupplyDigital Components

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UHIMA Technologies

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Israel . 100 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's NCV20061SQ3T2G Operational Amplifier (Op Amp). With its advanced technology and automotive-grade design, this small but powerful amplifier delivers exceptional performance in a wide range of applications. Whether you're designing audio systems, sensor interfaces, or precision instrumentation, the NCV20061SQ3T2G offers unparalleled accuracy and stability. Its compact size and surface mount capability make it ideal for space-constrained designs. Trust Onsemi to provide you with the best-in-class components that ensure your projects exceed expectations. Discover the value, benefits, and advantages that the NCV20061SQ3T2G brings to your designs and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the operational amplifier, making it a reliable choice for various applications.

Maximum Input Offset Voltage: 4000 uV

With a low maximum input offset voltage, this operational amplifier provides excellent accuracy and precision in signal processing, making it suitable for high-performance electronic designs.

Maximum Average Bias Current (IIB): 0.0015 uA

The extremely low maximum average bias current ensures minimal current flow through the amplifier's input pins, resulting in reduced power consumption and improved efficiency.

Surface Mount: YES

Being surface mountable allows for ease of installation and compact circuit designs, making this operational amplifier a convenient choice for space-constrained applications.

No. of Functions: 1

This operational amplifier offers a single functionality, simplifying circuit integration and reducing complexity, making it ideal for various analog applications.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that this operational amplifier meets the stringent automotive-grade industry standards, making it highly reliable and suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into a variety of circuit layouts, ensuring flexibility and convenience in system designs.

Nominal Common Mode Reject Ratio: 76 dB

With a high nominal common mode reject ratio, this operational amplifier effectively suppresses common-mode noise, resulting in accurate and distortion-free signal amplification, making it an excellent choice for audio applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V enables compatibility with a range of voltage levels, making this operational amplifier versatile and suitable for various electrical systems.

No. of Terminals: 5

This operational amplifier has 5 terminals, allowing for easy connection and configuration, making it a convenient choice for quick prototyping and circuit development.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style provide compactness and space-saving advantages, making this operational amplifier suitable for portable and miniaturized devices.

Maximum Supply Voltage Limit: 7 V

With a maximum supply voltage limit of 7V, this operational amplifier can handle higher voltages, providing flexibility and robustness in various voltage-dependent applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in demanding and high-temperature environments, making this operational amplifier suitable for industrial and automotive applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable operation even in extreme cold environments, making this operational amplifier suitable for a wide range of temperature-sensitive applications.

Terminal Finish: Matte Tin (Sn) - annealed

The use of matte tin (Sn) with an annealed finish on the terminals ensures good conductivity, solderability, and resistance to corrosion, making this operational amplifier suitable for long-term and reliable operation.

Terminal Position: DUAL

The operational amplifier has a dual terminal position, facilitating easy and straightforward connections, making it a convenient choice for quick and efficient circuit assembly.

Maximum Seated Height: 1.1 mm

With a maximum seated height of 1.1 mm, this operational amplifier offers a low-profile design, making it suitable for compact and space-constrained applications.

Width: 1.25 mm

The narrow width of 1.25 mm allows for efficient space utilization, making this operational amplifier suitable for designs where size is a constraint.

Maximum Time At Peak Reflow Temperature (s): 20

This operational amplifier can withstand a maximum time of 20 seconds at the peak reflow temperature, ensuring reliable soldering during manufacturing processes, guaranteeing proper connections and reducing assembly errors.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this operational amplifier can withstand high-temperature soldering processes, ensuring reliable and robust solder joints.

Length: 2 mm

The compact length of 2 mm allows for efficient space utilization, making this operational amplifier ideal for applications where size is critical.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that this operational amplifier can withstand the harsh temperature conditions commonly encountered in automotive environments, making it reliable and suitable for automotive electronics.

Nominal Unity Gain Bandwidth: 3000 kHz

With a high nominal unity gain bandwidth of 3000 kHz, this operational amplifier offers excellent signal reproduction and stability, making it a preferred choice for applications requiring high-frequency response.

Technology: CMOS

The use of CMOS technology in this operational amplifier ensures low power consumption, high input impedance, and compatibility with a wide range of voltage levels, making it versatile and suitable for various low-power applications.

Terminal Form: GULL WING

The gull-wing terminal form allows for easy and secure soldering of the operational amplifier, ensuring reliable electrical connections and facilitating cost-effective production processes.

Amplifier Type: OPERATIONAL AMPLIFIER

This operational amplifier is specifically designed as an operational amplifier, offering amplification and signal conditioning capabilities, making it an ideal choice for amplification and signal processing applications.

Nominal Slow Rate: 1.2 V/us

With a low nominal slow rate of 1.2 V/µs, this operational amplifier provides stable and controlled signal amplification, minimizing distortion and ensuring accurate signal reproduction in dynamic applications.

Terminal Pitch: 0.65 mm

The narrow terminal pitch of 0.65 mm allows for higher pin density and compact designs, making this operational amplifier suitable for space-constrained applications.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level of 1 indicates that this operational amplifier has a low moisture absorption rate, ensuring its reliability and longevity in humid environments.

Technical Specifications

Operational Amplifiers (Op Amps) NCV20061SQ3T2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

76 dB

Input Offset Voltage Limit:

4000 uV

Nominal Slew Rate:

1.2 V/us

Peak Bias Current:

1.5 nA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

20 s

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin - annealed

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

NCV20061SQ3T2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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