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NCV2902DR2

Onsemi

NCV2902DR2 by Onsemi

NCV2902DR2 by Onsemi is a micropower operational amplifier with 4 functions, featuring a max input offset voltage of 7000 uV and nominal voltage of 5V. Ideal for automotive applications due to AEC-Q100 screening level, it operates in temperatures ranging from -40 to 125 °C.

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3

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1k+

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Chip Stock

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Vyrian

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AZTECH Wire

Italy . 790 parts In-Stock

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Kulean Microsystems

USA . 6,501 parts In-Stock

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A-Z Elektronik GmbH

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Problanco Electronics

Mexico . 6,271 parts In-Stock

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Kepictronics

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Assy Fe

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SupplyDigital Components

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Corphita

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TANS Electronics

Latvia . 377 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the NCV2902DR2 by Onsemi, a cutting-edge operational amplifier designed for automotive applications. With a robust construction and AEC-Q100 screening level, this op amp delivers exceptional precision and stability in demanding environments. From power management to sensor interfacing, this versatile device offers unparalleled value and efficiency, making it the ideal choice for engineers seeking top-tier performance. Trust Onsemi's expertise and innovation to elevate your designs to new heights with the NCV2902DR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package offers good durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage helps in minimizing errors in the output signal, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): -0.5 uA

Low bias current ensures minimal power consumption and low input offset errors, making this op amp suitable for high-performance applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Common Mode Reject Ratio: 70 dB

High common mode rejection ratio helps in rejecting common mode noise, resulting in a cleaner output signal in noisy environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with a wide range of electronic systems.

Power Supplies (V): 5/30

Supports dual power supply operation with voltage ranges of 5V and 30V, offering flexibility in different system configurations.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in a variety of environmental conditions, including automotive applications.

Minimum Voltage Gain: 15000

High minimum voltage gain ensures a strong amplification of the input signal, making it suitable for applications requiring high signal amplification.

Frequency Compensation: YES

Frequency compensation feature helps in maintaining stability and reducing oscillations in the op amp, ensuring reliable operation.

Technical Specifications

Operational Amplifiers (Op Amps) NCV2902DR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/30 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

15000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

-500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16 V

Minimum Negative Supply Voltage:

-16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

NCV2902DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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