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NCV2002SN2T1

Onsemi

NCV2002SN2T1 by Onsemi

NCV2002SN2T1 by Onsemi is an Op Amp with 7500uV Max Input Offset Voltage, 82dB CMRR, and 900kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening and low-bias operation. Package: PLASTIC/EPOXY, SMD, 6 terminals, -40 to 125 °C temp range.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 66 parts In-Stock

1+ parts

-

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$0.304

1k+ parts

$0.252

10k+ parts

$0.225

66

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$0.304

$0.252

$0.225

Distributors (In-Stock)

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Digiode

USA . 409 parts In-Stock

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$0.237

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409

$0.237

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

USA . 11,709 parts In-Stock

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Corphita

USA . 2,112 parts In-Stock

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$0.224

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$0.224

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Vigor

Singapore . 249 parts In-Stock

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$0.240

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249

$0.240

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Corohmni

South Africa . 390 parts In-Stock

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$0.249

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$0.249

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Component Stockers USA

USA . 73 parts In-Stock

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$0.260

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73

$0.260

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$7.986

100+ parts

$7.906

1k+ parts

$7.586

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-

200

$7.986

$7.906

$7.586

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AZTECH Wire

Italy . 77 parts In-Stock

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$14.830

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QUARKTWIN TECHNOLOGY LTD

USA . 8,227 parts In-Stock

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Problanco Electronics

Mexico . 8,213 parts In-Stock

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Kulean Microsystems

USA . 7,419 parts In-Stock

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SupplyDigital Components

Austria . 6,901 parts In-Stock

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TANS Electronics

Latvia . 5,685 parts In-Stock

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Microchip USA

USA . 4,503 parts In-Stock

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UHIMA Technologies

Türkiye . 813 parts In-Stock

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Overview

Discover the superior quality and reliability of the NCV2002SN2T1 operational amplifier by Onsemi. With a focus on automotive applications, this amplifier boasts a high common mode reject ratio and low-bias technology for optimal performance in challenging environments. The compact design and surface mount capability make it ideal for space-constrained projects. Trust in Onsemi's reputation for excellence and innovation to deliver exceptional value and benefits to your next project with the NCV2002SN2T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 7500 uV

Ensures minimal error in the output voltage due to input offset, resulting in accurate signal processing.

Surface Mount: YES

Facilitates easy integration onto circuit boards, saving space and enabling efficient assembly.

Nominal Common Mode Reject Ratio: 82 dB

Indicates good rejection of common mode signals, leading to clear and accurate output signal.

Nominal Supply Voltage / Vsup (V): 2.5

Operates at the specified supply voltage for consistent performance and compatibility with existing systems.

Minimum Slew Rate: 0.85 V/us

Allows for fast response to input signal changes, making it suitable for high-speed applications.

Maximum Operating Temperature: 125 °C

Ensures reliable operation in varying environmental conditions, particularly in automotive applications.

Nominal Unity Gain Bandwidth: 900 kHz

Indicates the frequency range where the operational amplifier can operate with unity gain, suitable for various signal processing tasks.

Technology: CMOS

Offers low power consumption and high input impedance, making it energy-efficient and suitable for battery-powered devices.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals accurately, making it a reliable choice for signal conditioning applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCV2002SN2T1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

900 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.85 V/us

Nominal Slew Rate:

1.2 V/us

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

3.5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-3.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

NCV2002SN2T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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