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NCV2002SN1T1

Onsemi

NCV2002SN1T1 by Onsemi

NCV2002SN1T1 by Onsemi is an Op Amp with 7500uV Max Input Offset Voltage, 82dB CMRR, and 900kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening, it operates at -40 to 125 °C with low bias and consumes only 1mA max supply current.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 356 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.252

10k+ parts

$0.225

356

-

$0.304

$0.252

$0.225

Distributors (In-Stock)

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Digiode

USA . 2,196 parts In-Stock

1+ parts

$0.237

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-

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2,196

$0.237

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Chip Stock

USA . 26,000 parts In-Stock

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26,000

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Vyrian

USA . 9,580 parts In-Stock

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9,580

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Distributors (Availability)

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Corphita

USA . 1,314 parts In-Stock

1+ parts

$0.224

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-

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1,314

$0.224

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Vigor

Singapore . 658 parts In-Stock

1+ parts

$0.240

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-

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658

$0.240

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Corohmni

South Africa . 430 parts In-Stock

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$0.249

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430

$0.249

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Component Stockers USA

USA . 303 parts In-Stock

1+ parts

$0.260

100+ parts

$0.240

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303

$0.260

$0.240

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AZTECH Wire

Italy . 1,143 parts In-Stock

1+ parts

$13.580

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1,143

$13.580

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TANS Electronics

Latvia . 6,980 parts In-Stock

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6,980

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Problanco Electronics

Mexico . 3,553 parts In-Stock

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SupplyDigital Components

Austria . 2,698 parts In-Stock

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Kulean Microsystems

USA . 1,310 parts In-Stock

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UHIMA Technologies

Türkiye . 644 parts In-Stock

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644

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Microchip USA

USA . 282 parts In-Stock

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Overview

Enhance your automotive electronic designs with the NCV2002SN1T1 operational amplifier by Onsemi. With a compact design and advanced CMOS technology, this amplifier offers precise performance and reliability in a wide range of applications. From control systems to sensor interfaces, this amplifier provides low-bias operation, high voltage gain, and excellent frequency compensation. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the NCV2002SN1T1 brings to your projects. Elevate your designs with the best-in-class operational amplifier from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 7500 uV

Low input offset voltage helps in reducing error in precision applications, making this amplifier suitable for accurate measurements.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 82 dB

High common mode rejection ratio indicates the amplifier's ability to reject noise and interference, resulting in clear and accurate signal amplification.

Nominal Supply Voltage / Vsup (V): 2.5

Works efficiently with a low supply voltage, making it suitable for low-power applications.

No. of Terminals: 6

Provides flexibility in connecting external components for various circuit configurations.

Minimum Slew Rate: 0.85 V/us

Fast slew rate allows for quick response to input signals, making this operational amplifier suitable for high-frequency applications.

Maximum Supply Voltage Limit: 3.5 V

Can withstand higher supply voltages, providing versatility in different voltage scenarios while ensuring safe operation.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high-temperature environments, making it suitable for automotive and industrial applications.

Frequency Compensation: YES

Provides stability and optimal performance in various operating conditions.

Minimum Voltage Gain: 10000

High voltage gain ensures accurate amplification of weak signals, making it suitable for sensor and instrumentation applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this operational amplifier energy-efficient and reliable.

Nominal Unity Gain Bandwidth: 900 kHz

Offers sufficient bandwidth for amplifying signals with minimal distortion, suitable for audio and communication applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying signals accurately with minimal distortion, making it a reliable choice for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCV2002SN1T1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

900 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.85 V/us

Nominal Slew Rate:

1.2 V/us

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

3.5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-3.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

NCV2002SN1T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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