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NCS7101SN2T1

Onsemi

NCS7101SN2T1 by Onsemi

NCS7101SN2T1 by Onsemi is a CMOS Operational Amplifier with 9000uV Max Input Offset Voltage, 60dB Common Mode Reject Ratio, and 16000 Min Voltage Gain. Ideal for industrial applications requiring low-bias amplification in compact designs. Package: PLASTIC/EPOXY, Surface Mount: YES, Supply Voltage: +-5/10V.

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1k+

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AZTECH Wire

Italy . 923 parts In-Stock

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Kulean Microsystems

USA . 8,352 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Corphita

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Problanco Electronics

Mexico . 1,842 parts In-Stock

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Vigor

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Microchip USA

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Overview

Experience unparalleled performance and reliability with the NCS7101SN2T1 operational amplifier by Onsemi. Designed to meet the highest industry standards, this cutting-edge product offers exceptional precision and efficiency for a wide range of applications. Whether you're working on industrial automation, medical devices, or consumer electronics, this amplifier delivers unmatched value and benefits to help you achieve optimal results. Trust Onsemi's expertise and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 9000 uV

Ensures precision in signal amplification and minimizes errors in the output.

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 60 dB

Filters out common mode noise, ensuring a clean and accurate output signal.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a low supply voltage, making it suitable for low-power applications.

Power Supplies (V): +-0.9/+-5/1.8/10

Offers a wide range of power supply options for flexibility in different circuit designs.

No. of Terminals: 5

Simplifies the circuit connection and integration with other components.

Minimum Slew Rate: 0.7 V/us

Enables fast response to input signal changes, essential for dynamic signal processing.

Maximum Supply Voltage Limit: 5 V

Protects the operational amplifier from overvoltage conditions, ensuring long-term reliability.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with varying temperature conditions.

Frequency Compensation: YES

Stabilizes the operational amplifier's frequency response for consistent performance.

Minimum Voltage Gain: 16000

Provides high amplification capabilities for weak input signals.

Minimum Operating Temperature: -40 °C

Functions reliably in cold environments without compromising performance.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and solderability for secure connections.

Maximum Negative Supply Voltage Limit: -5 V

Allows for symmetric power supply operation for balanced signal processing.

Nominal Unity Gain Bandwidth: 1000 kHz

Provides a high bandwidth for accurate signal reproduction across a wide frequency range.

Technology: CMOS

Utilizes CMOS technology for low power consumption and enhanced noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for precision signal amplification in various applications.

Maximum Supply Current: 1.5 mA

Operates efficiently with low current consumption, ideal for battery-powered devices.

Nominal Negative Supply Voltage (Vsup): -2.5 V

Supports symmetric power supply operation for balanced signal processing.

Nominal Slow Rate: 1.2 V/us

Balances speed and accuracy in signal amplification, suitable for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCS7101SN2T1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±0.9/±5/1.8/10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

16000

Minimum Slew Rate:

0.7 V/us

Nominal Slew Rate:

1.2 V/us

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS7101SN2T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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