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NCS7101SN1T1

Onsemi

NCS7101SN1T1 by Onsemi

NCS7101SN1T1 by Onsemi is a CMOS operational amplifier with 9000uV max input offset voltage, 60dB common mode reject ratio, and 16000 min voltage gain. Ideal for industrial applications requiring a low-bias, high slew rate op amp in a small outline package.

Median Price

$0.401

Lifecycle Status

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8

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1k+

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Rochester

USA . 71,980 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

71,980

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$0.357

$0.296

$0.264

DigiKey

USA . 71,980 parts In-Stock

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$0.450

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71,980

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$0.450

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Verical

USA . 71,980 parts In-Stock

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-

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$0.401

10k+ parts

$0.330

71,980

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-

$0.401

$0.330

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Digiode

USA . 996 parts In-Stock

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$0.277

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996

$0.277

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Vyrian

USA . 148 parts In-Stock

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$0.292

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148

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Chip Stock

USA . 105,505 parts In-Stock

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Zilex Electronics Inc.

Canada . 640 parts In-Stock

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640

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Prism Electronics

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50

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Corphita

USA . 1,946 parts In-Stock

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$0.263

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1,946

$0.263

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Vigor

Singapore . 373 parts In-Stock

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$0.280

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373

$0.280

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Corohmni

South Africa . 113 parts In-Stock

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$0.292

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Continental Prestige Electronics

USA . 71,980 parts In-Stock

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$0.655

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Kulean Microsystems

USA . 7,228 parts In-Stock

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

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SupplyDigital Components

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Microchip USA

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Perfect Parts

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Overview

Discover the innovative NCS7101SN1T1 by Onsemi, a high-quality operational amplifier designed to meet the diverse needs of modern electronics. With Onsemi's reputation for excellence in semiconductor manufacturing, this product delivers superior performance and reliability. Ideal for applications requiring precision amplification, this compact device offers exceptional value with its low power consumption and wide operating temperature range. Whether you're designing consumer electronics or industrial automation systems, the NCS7101SN1T1 provides the perfect balance of efficiency and versatility. Experience the difference with Onsemi's cutting-edge technology in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 9000 uV

Ensures minimal error in the input signal, leading to accurate output results.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Nominal Common Mode Reject Ratio: 60 dB

Excellent rejection of common mode noise for cleaner and more accurate signal processing.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for efficient performance of the operational amplifier.

Power Supplies (V): +-0.9/+-5/1.8/10

Offers flexibility in power supply options for different application requirements.

No. of Terminals: 5

Compact design with a minimal number of terminals for space-saving layouts.

Minimum Slew Rate: 0.7 V/us

Fast rate of change in the output voltage for rapid response to input signals.

Maximum Supply Voltage Limit: 5 V

Provides protection against excessive voltage inputs to prevent damage to the amplifier.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with high operating temperature requirements.

Frequency Compensation: YES

Enhances stability and bandwidth of the operational amplifier for consistent performance.

Minimum Voltage Gain: 16000

High voltage gain capability for amplifying weak signals effectively.

Minimum Operating Temperature: -40 °C

Wide operating temperature range for reliable performance in various environments.

Terminal Finish: TIN LEAD

Provides good conductivity and corrosion resistance for the terminal connections.

Maximum Seated Height: 1.1 mm

Low profile design for space-constrained applications.

Nominal Unity Gain Bandwidth: 1000 kHz

High bandwidth capability for maintaining signal integrity and fidelity.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Maximum Supply Current: 1.5 mA

Efficient power utilization with low supply current requirement.

Nominal Negative Supply Voltage (Vsup): -2.5 V

Supports negative supply voltage for dual power supply operation.

Architecture: VOLTAGE-FEEDBACK

Utilizes a voltage-feedback architecture for precise signal amplification and control.

Packing Method: TAPE AND REEL

Convenient packaging for automated assembly processes.

Nominal Slow Rate: 1.2 V/us

Sufficient slew rate for amplification of signals with moderate speed changes.

Terminal Pitch: 0.95 mm

Optimal terminal pitch for easy soldering and connection to the circuit board.

Technical Specifications

Operational Amplifiers (Op Amps) NCS7101SN1T1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±0.9/±5/1.8/10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

16000

Minimum Slew Rate:

0.7 V/us

Nominal Slew Rate:

1.2 V/us

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS7101SN1T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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