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NCS2203SN1T1

Onsemi

NCS2203SN1T1 by Onsemi

NCS2203SN1T1 by Onsemi is a CMOS comparator with 8000uV max input offset voltage, 0.01uA max average bias current, and 1100ns nominal response time. It is ideal for industrial applications requiring a compact design with a small outline, thin profile package style.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

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$0.277

1k+ parts

$0.230

10k+ parts

$0.205

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-

$0.277

$0.230

$0.205

Verical

USA . 3,000 parts In-Stock

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$0.257

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$0.257

Distributors (In-Stock)

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Digiode

USA . 1,293 parts In-Stock

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$0.217

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$0.217

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Vyrian

USA . 2,485 parts In-Stock

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2,485

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Distributors (Availability)

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Corphita

USA . 93 parts In-Stock

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$0.205

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93

$0.205

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Vigor

Singapore . 270 parts In-Stock

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$0.220

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270

$0.220

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Corohmni

South Africa . 271 parts In-Stock

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$0.228

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271

$0.228

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AZTECH Wire

Italy . 864 parts In-Stock

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$19.910

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$19.910

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SupplyDigital Components

Austria . 7,579 parts In-Stock

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TANS Electronics

Latvia . 5,385 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,935 parts In-Stock

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Kulean Microsystems

USA . 1,745 parts In-Stock

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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Microchip USA

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Overview

Looking for a high-quality comparator for your industrial applications? Look no further than the NCS2203SN1T1 by Onsemi. With its advanced CMOS technology and open-drain output type, this small outline, thin profile device offers fast response times and low bias current, ensuring reliable performance in a wide range of operating temperatures. Trust Onsemi's expertise in manufacturing to deliver a top-notch product that meets your needs. Upgrade your systems with the NCS2203SN1T1 and experience the benefits of precision and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the comparator, ensuring long-term reliability.

Maximum Input Offset Voltage: 8000 uV

Low maximum input offset voltage of 8000 uV ensures accurate and precise measurements, making this comparator suitable for applications requiring high precision.

Maximum Average Bias Current (IIB): 0.01 uA

Low maximum average bias current of 0.01 uA minimizes power consumption and reduces heat generation, improving efficiency of the comparator.

Surface Mount: YES

Surface mount capability makes installation and integration of the comparator easy and convenient, especially in space-constrained applications.

Nominal Supply Voltage / Vsup (V): 3

Nominal supply voltage of 3V ensures compatibility with a wide range of systems and makes this comparator versatile for various applications.

Maximum Supply Voltage Limit: 6 V

High maximum supply voltage limit of 6V allows for flexibility in power supply options and compatibility with different voltage levels, enhancing the usability of the comparator.

Maximum Operating Temperature: 105 °C

Wide maximum operating temperature range of 105 °C ensures reliability and performance in harsh environmental conditions, making this comparator suitable for industrial applications.

Output Type: OPEN-DRAIN

Open-drain output type provides flexibility in connecting the comparator to other components, making it compatible with a wide range of systems and circuits.

Nominal Response Time: 1100 ns

Fast nominal response time of 1100 ns enables quick and precise signal processing, making this comparator ideal for time-critical applications.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and noise immunity, making this comparator efficient and reliable for various digital applications.

Technical Specifications

Comparators NCS2203SN1T1 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

1/5 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

8 mV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

10 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

1.1 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

NCS2203SN1T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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