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NCS2202SN2T1

Onsemi

NCS2202SN2T1 by Onsemi

NCS2202SN2T1 by Onsemi is a CMOS comparator with 8000uV max input offset voltage, 0.01uA max average bias current, and 1100ns nominal response time. Ideal for industrial applications requiring a compact design, it operates b/w -40 to 105 °C with a supply voltage range of 1/5V and max seated height of 1.1mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 7,472 parts In-Stock

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Speed Components Ltd

Israel . 3,508 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,112 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,165 parts In-Stock

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TANS Electronics

Latvia . 7,939 parts In-Stock

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Problanco Electronics

Mexico . 6,409 parts In-Stock

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SupplyDigital Components

Austria . 4,285 parts In-Stock

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UHIMA Technologies

Türkiye . 791 parts In-Stock

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Corphita

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Microchip USA

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Vigor

Singapore . 357 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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Kulean Microsystems

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Overview

Discover the unparalleled quality and precision of the NCS2202SN2T1 comparator by Onsemi. This cutting-edge device offers unmatched performance, reliability, and versatility for a wide range of applications. Onsemi's commitment to excellence shines through in every aspect of this product, from its innovative design to its superior functionality. Experience the value and benefits of using the NCS2202SN2T1 in your projects, and unlock a whole new level of efficiency and performance. Choose Onsemi for top-of-the-line comparators that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Maximum Input Offset Voltage: 8000 uV

The low input offset voltage ensures accurate and precise measurements with minimal errors.

Maximum Average Bias Current (IIB): 0.01 uA

The low bias current helps in reducing power consumption and maintaining signal integrity.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and cost.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V makes it compatible with a wide range of electronic devices and systems.

Maximum Supply Voltage Limit: 6 V

With a maximum supply voltage limit of 6V, the product can handle higher voltage inputs without damage.

Maximum Operating Temperature: 105 °C

The high operating temperature range makes it suitable for industrial applications where temperature variations are common.

Output Type: OPEN-DRAIN

The open-drain output type allows for easy interfacing with other digital circuits and devices.

Nominal Response Time: 1100 ns

The fast response time ensures quick and efficient processing of input signals.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Comparators NCS2202SN2T1 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

1/5 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

8 mV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

10 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Nominal Negative Supply Voltage (Vsup):

0 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

1.1 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS2202SN2T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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