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NCP585LSN12T1G

Onsemi

NCP585LSN12T1G by Onsemi

NCP585LSN12T1G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.35A and a nominal output voltage of 1.2V. It operates in an extended temperature range from -40 °C to 125°C, making it suitable for various applications requiring stable voltage regulation in compact spaces. The package style is small outline, low profile, shrink pitch, ideal for surface mount designs where space is limited.

Median Price

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Lifecycle Status

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Vyrian

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Dan-Mar Components

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Digiode

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Speed Components Ltd

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AZTECH Wire

Italy . 131 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Kulean Microsystems

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Authorized Procurement Solutions

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TANS Electronics

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Vigor

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Overview

Experience the unparalleled quality and reliability of Onsemi with the NCP585LSN12T1G, a top-of-the-line Fixed Regulator - Positive Single Output LDO. Perfect for a wide range of applications, this compact and efficient regulator offers customers superior performance and stability. With Onsemi's cutting-edge technology and commitment to excellence, you can trust that this product will meet all your power regulation needs with ease. Upgrade to the NCP585LSN12T1G today and enjoy the benefits of a trusted manufacturer and a high-quality product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the regulator, ensuring long-term reliability.

Maximum Dropout Voltage: 1.75 V

With a maximum dropout voltage of 1.75 V, this regulator can maintain a stable output voltage even when the input voltage drops significantly, making it suitable for use in applications with varying input voltages.

Surface Mount: YES

The surface mount capability of this regulator allows for easy and efficient PCB assembly, saving time and reducing production costs.

Operating Temperature (TJ-Max): 125 °C

The high operating temperature tolerance of 125 °C ensures that the regulator can function effectively in a wide range of operating conditions without overheating.

Technology: CMOS

The CMOS technology used in this regulator offers high efficiency and low power consumption, making it ideal for battery-powered devices or applications where energy efficiency is important.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP585LSN12T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.75 V

Nominal Dropout Voltage-1:

.51 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

6 V

Minimum Input Voltage:

1.4 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Line Regulation:

.0103 %

Maximum Load Regulation:

.07 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.35 A

Maximum Output Voltage-1:

1.236 V

Minimum Output Voltage-1:

1.164 V

Nominal Output Voltage-1:

1.2 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.4 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3 %

Width:

1.65 mm

Trade Compliance

NCP585LSN12T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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