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NCP585DSN18T1G

Onsemi

NCP585DSN18T1G by Onsemi

NCP585DSN18T1G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.35A and a nominal output voltage of 1.8V. It operates in temperatures ranging from -40 to 125°C, making it suitable for various applications requiring stable voltage regulation in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 2,667 parts In-Stock

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Digiode

USA . 1,574 parts In-Stock

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Electronics Depot

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 335 parts In-Stock

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$5.930

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335

$5.930

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Ampacity Inc.

Singapore . 911 parts In-Stock

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$8.500

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911

$8.500

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AZTECH Wire

Italy . 358 parts In-Stock

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$14.236

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Component Stockers USA

USA . 288 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 7,093 parts In-Stock

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SupplyDigital Components

Austria . 5,721 parts In-Stock

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TANS Electronics

Latvia . 5,656 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 4,713 parts In-Stock

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Argo Parts USA

USA . 4,484 parts In-Stock

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Problanco Electronics

Mexico . 2,169 parts In-Stock

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Corphita

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Aranea Global

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Vigor

Singapore . 352 parts In-Stock

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Microchip USA

USA . 286 parts In-Stock

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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Overview

Discover the innovative NCP585DSN18T1G by Onsemi, a top-quality Fixed Regulator with a multitude of applications. Crafted with precision and expertise by Onsemi, this Positive Single Output LDO offers unparalleled value and benefits to customers. With a focus on reliability and efficiency, this product guarantees top-notch performance and seamless integration into various devices. Elevate your projects with the NCP585DSN18T1G and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for a variety of applications.

Maximum Dropout Voltage: 1.48 V

The low dropout voltage ensures efficient voltage regulation even when the input voltage is close to the output voltage, making it ideal for applications with tight voltage requirements.

Surface Mount: YES

The surface mount design allows for easy and convenient installation on printed circuit boards, saving space and simplifying the manufacturing process.

Operating Temperature (TJ-Max): 125 °C

With a maximum operating temperature of 125°C, this regulator can handle high temperature environments without compromising performance, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this regulator offers low power consumption and high efficiency, making it an energy-efficient choice for battery-powered devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on the PCB and efficient use of space, making it suitable for compact designs.

Operating Temperature (TJ-Min): -40 °C

With a minimum operating temperature of -40°C, this regulator can operate reliably in cold environments, expanding its versatility for use in various conditions.

Minimum Output Voltage: 1.746 V

The minimum output voltage ensures a steady and reliable supply of power to the connected components, preventing issues related to insufficient voltage levels.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP585DSN18T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.48 V

Nominal Dropout Voltage-1:

.32 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

6 V

Minimum Input Voltage:

1.4 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Line Regulation:

.0133 %

Maximum Load Regulation:

.07 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.35 A

Maximum Output Voltage-1:

1.854 V

Minimum Output Voltage-1:

1.746 V

Nominal Output Voltage-1:

1.8 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.4 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3 %

Width:

1.65 mm

Trade Compliance

NCP585DSN18T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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