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NCP583XV29T2G

Onsemi

NCP583XV29T2G by Onsemi

NCP583XV29T2G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 2.9V and max output current of 0.18A. It operates in temperatures ranging from -40 to 125 °C, making it suitable for various applications requiring stable voltage regulation in compact spaces.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 16,000 parts In-Stock

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-

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$0.304

1k+ parts

$0.252

10k+ parts

$0.225

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$0.304

$0.252

$0.225

Verical

USA . 12,000 parts In-Stock

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$0.281

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$0.281

Distributors (In-Stock)

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Digiode

USA . 588 parts In-Stock

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$0.237

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$0.237

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Vyrian

USA . 5,098 parts In-Stock

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Zilex Electronics Inc.

Canada . 4,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,024 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,793 parts In-Stock

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$0.224

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$0.224

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Vigor

Singapore . 249 parts In-Stock

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$0.240

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Corohmni

South Africa . 393 parts In-Stock

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$0.245

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393

$0.245

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AZTECH Wire

Italy . 688 parts In-Stock

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$9.690

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$9.690

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Continental Prestige Electronics

USA . 16,000 parts In-Stock

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$0.211

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Kulean Microsystems

USA . 7,117 parts In-Stock

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Problanco Electronics

Mexico . 7,031 parts In-Stock

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Perfect Parts

USA . 6,774 parts In-Stock

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SupplyDigital Components

Austria . 6,396 parts In-Stock

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Microchip USA

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Cyclops Electronics Ltd (Excess)

UK . 3,024 parts In-Stock

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TANS Electronics

Latvia . 2,776 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Discover the NCP583XV29T2G by Onsemi, a top-of-the-line fixed regulator that delivers exceptional performance and reliability. Crafted by a renowned manufacturer, this LDO regulator is perfect for a wide range of applications. With precise voltage control and superior efficiency, this product ensures stable power supply with minimal dropout voltage. Say goodbye to worries about fluctuating voltages and enjoy seamless functionality with the NCP583XV29T2G. Upgrade your electronics today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and insulation, making the product suitable for a range of environments.

Maximum Dropout Voltage: 1.4 V

Low dropout voltage ensures efficient power usage and minimal power loss, increasing the overall efficiency of the regulator.

Surface Mount: YES

Ease of surface mounting allows for simple and efficient integration into various electronic circuits or PCB designs.

Operating Temperature: -40 to 125 °C

Wide operating temperature range ensures reliability and stability in both extreme cold and hot conditions, making it versatile for different applications.

Technology: CMOS

CMOS technology offers low power consumption, fast response times, and high noise immunity, contributing to the efficiency and performance of the regulator.

Nominal Output Voltage: 2.9 V

Stable output voltage ensures consistent power supply to connected devices, reducing the risk of damage and ensuring reliable performance.

Maximum Output Current: 0.18 A

A relatively high maximum output current capacity allows for powering a variety of devices or components without risk of overload, making it versatile for different applications.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP583XV29T2G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.4 V

Nominal Dropout Voltage-1:

.25 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

6 V

Minimum Input Voltage:

1.7 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e2

Length:

1.6 mm

Maximum Line Regulation:

.01508 %

Maximum Load Regulation:

.04 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

6

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.18 A

Maximum Output Voltage-1:

3.016 V

Minimum Output Voltage-1:

2.784 V

Nominal Output Voltage-1:

2.9 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.047,20

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

.6 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Width:

1.2 mm

Trade Compliance

NCP583XV29T2G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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