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NCP5215MNR2G

Onsemi

NCP5215MNR2G by Onsemi

NCP5215MNR2G by Onsemi is a voltage-mode dual switching controller with a max switching frequency of 460 kHz. It operates in an industrial temperature range from -40 to 85 °C, making it suitable for various applications requiring precise voltage regulation in compact spaces. The chip carrier package style with a very thin profile and no-lead terminal form enables surface mount assembly for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,740 parts In-Stock

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Digiode

USA . 1,158 parts In-Stock

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AZTECH Wire

Italy . 52 parts In-Stock

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$9.040

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TANS Electronics

Latvia . 6,739 parts In-Stock

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Kulean Microsystems

USA . 6,583 parts In-Stock

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Assy Fe

Spain . 2,195 parts In-Stock

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Kepictronics

USA . 2,145 parts In-Stock

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Problanco Electronics

Mexico . 1,722 parts In-Stock

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Corphita

USA . 1,089 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 419 parts In-Stock

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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SupplyDigital Components

Austria . 314 parts In-Stock

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Overview

Unlock the power of efficient energy management with the NCP5215MNR2G by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in their products. The NCP5215MNR2G falls under the category of Switching Regulators & Controllers, offering unparalleled performance in a compact square package. Ideal for a wide range of applications, this chip carrier ensures precise control and voltage-mode operation. Say goodbye to energy wastage and hello to optimized power usage with the NCP5215MNR2G by Onsemi.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient mounting on a PCB, saving space and making assembly process simpler.

Package Shape: SQUARE

Square shape allows for more efficient use of space on the PCB and helps in better heat dissipation.

No. of Terminals: 40

Having more terminals allows for more connectivity options and flexibility in designing the circuit.

Maximum Operating Temperature: 85 °C

Allows for reliable operation in a wide range of temperatures, making it suitable for industrial applications.

Control Mode: VOLTAGE-MODE

Voltage-mode control ensures accurate and stable output voltage regulation.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold conditions, making it suitable for a variety of environments.

Terminal Finish: TIN

Tin finish provides good electrical conductivity and corrosion resistance, ensuring long-term reliability.

Maximum Seated Height: 1 mm

Low seated height allows for a compact design and easier integration into space-constrained applications.

Width (mm): 6 mm

Compact width allows for efficient use of space on the PCB.

Nominal Input Voltage: 5 V

Ideal input voltage range for many applications, ensuring compatibility with common power sources.

Maximum Switching Frequency: 460 kHz

High switching frequency allows for efficient power conversion and minimizes ripple voltage.

Minimum Input Voltage: 4.5 V

Wide input voltage range allows for flexibility in power supply design.

Maximum Input Voltage: 24 V

Accepts a wide range of input voltages, making it versatile for different power supply requirements.

Technical Specifications

Switching Regulators & Controllers NCP5215MNR2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

24 V

Minimum Input Voltage:

4.5 V

Nominal Input Voltage:

5 V

JESD-30 Code:

S-XQCC-N40

JESD-609 Code:

e3

Length:

6 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

PHASE-SHIFT

Maximum Switching Frequency:

460 kHz

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

NCP5215MNR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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