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NCP5209MN

Onsemi

NCP5209MN by Onsemi

NCP5209MN by Onsemi is a 20-terminal switching controller with a max output current of 2.4A and max switching frequency of 550kHz. Ideal for applications requiring pulse width modulation control, it operates b/w 0-70 °C and accepts input voltages from 4.5V to 5.5V, making it suitable for various commercial projects.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,836 parts In-Stock

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1,836

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Digiode

USA . 1,209 parts In-Stock

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1,209

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 5,198 parts In-Stock

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5,198

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SupplyDigital Components

Austria . 4,004 parts In-Stock

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4,004

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TANS Electronics

Latvia . 2,697 parts In-Stock

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2,697

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Problanco Electronics

Mexico . 2,011 parts In-Stock

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2,011

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Corphita

USA . 1,719 parts In-Stock

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1,719

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Corohmni

South Africa . 453 parts In-Stock

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453

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UHIMA Technologies

Türkiye . 153 parts In-Stock

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Overview

Discover the power and precision of the NCP5209MN by Onsemi, a top-of-the-line switching regulator and controller that guarantees unmatched quality and reliability. From its sleek design to its advanced control techniques, this product is a game-changer in the industry. With a wide range of applications and maximum output current of 2.4 A, customers can expect nothing short of excellence when using this cutting-edge technology. Trust Onsemi to deliver superior performance and efficiency every time with the NCP5209MN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the switching regulator, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Fits well with standard PCB layouts, making it compatible with a wide range of applications.

Maximum Operating Temperature: 70 °C

Can operate efficiently in a variety of environments without overheating, ensuring reliable performance.

Nominal Input Voltage: 5 V

Designed for use with a common input voltage, making it suitable for a wide range of electronic devices.

Maximum Output Current: 2.4A

Capable of delivering a high output current, making it suitable for applications that require more power.

Control Technique: PULSE WIDTH MODULATION

Uses a precise and efficient control technique to regulate the output voltage, ensuring stable and reliable operation.

Technical Specifications

Switching Regulators & Controllers NCP5209MN attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

4.5 V

Nominal Input Voltage:

5 V

JESD-30 Code:

R-PDSO-N20

JESD-609 Code:

e0

Length:

6 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

2.4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Surface Mount:

YES

Switcher Config:

PUSH-PULL

Maximum Switching Frequency:

550 kHz

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

5 mm

Trade Compliance

NCP5209MN Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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